MS2215 MICROSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- • REFRACTORY/GOLD METALLIZATION
- • EMITTER SITE BALLASTED
- • LOW THERMAL RESISTANCE
- • INPUT/OUTPUT MATCHING
- • OVERLAY GEOMETRY
- • METAL/CERAMIC HERMETIC PACKAGE
- • P OUT = 150 W MIN. WITH 7.5 dB Gain RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
MSC0921.PDF 9-23-98 MS2215 ELECTRICAL SPECIFICATIONS (ELECTRICAL SPECIFICATIONS ( Tcase = 25Tcase = 25 °°C)C) STATICSTATIC Symbol Test Conditions Value Min. Typ. Max. Unit BV CBO IC = 60 mA IE = 0 mA 55 65 ---- V BV EBO IE = 10 mA IC = 0 mA 3.5 ---- ---- V BV CES IC = 100 mA 55 ---- ---- V ICES V CE = 35 V ---- ---- 25 mA DYNAMICDYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit P OUT f = 960 - 1215 MHz P IN = 26.7 W V C C = 35 V 150 ---- ---- W VVC f = 960 - 1215 MHz P IN = 26.7 W V C C = 35 V 45 ---- ---- % G P f = 960 - 1215 MHz P IN = 26.7 W V C C = 35 V 7.5 ---- ---- dB Duty Cycle: Burst 49.2%, Overall 20.8%
MSC0921.PDF 9-23-98 MS2215 PACKAGE MECHANICAL DATA