MS2211 MICROSEMI | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Features
- • REFRACTORY/GOLD METALLIZATION
- • EMITTER SITE BALLASTED
- • 5:1 VSWR CAPABILITY
- • LOW THERMAL RESISTANCE
- • INPUT/OUTPUT MATCHING
- • OVERLAY GEOMETRY
- • METAL/CERAMIC HERMETIC PACKAGE
- • P OUT = 6.0 W MIN. WITH 9.3 dB Gain RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS
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MSC0919.PDF 9-23-98 MS2211 ELECTRICAL SPECIFICATIONS (ELECTRICAL SPECIFICATIONS ( Tcase = 25Tcase = 25 °°C)C) STATICSTATIC Symbol Test Conditions Value Min. Typ. Max. Unit BV CBO IC = 1 mA IE = 0 mA 48 ---- ---- V BV EBO IE = 1 mA IC = 0 mA 3.5 ---- ---- V BV CER IC = 5 mA R BE = 10 Ω 48 ---- ---- V ICES V BE = 0V V CE = 28 V ---- ---- 0.5 mA h FE V CE = 5V IC = 250 mA 30 ---- 300 ---- DYNAMICDYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit P OUT f = 960 - 1215 MHz P IN = 0.7 W V C C = 28 V 6.0 ---- ---- W VVC f = 960 - 1215 MHz P IN = 0.7 W V C C = 28 V 45 ---- ---- % G P f = 960 - 1215 MHz P IN = 0.7 W V C C = 28 V 9.3 ---- ---- dB Duty Cycle: Burst 49.2%, Overall 20.8%
MSC0919.PDF 9-23-98 MS2211 PACKAGE MECHANICAL DATA