MS2209 MICROSEMI | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
Features
- • REFRACTORY/GOLD METALIZATION
- • LOW THERMAL RESISTANCE
- • INPUT/OUTPUT MATCHING
- • OVERLAY GEOMETRY
- • EMITTER SITE BALLASTED RF & MICROWAVE TRANSISTORS AVIONICS APPLICATION
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MSC0930.PDF 10-13-98 MS2209 ELECTRICAL SPECIFICATIONS (ELECTRICAL SPECIFICATIONS ( Tcase = 25Tcase = 25 °°C)C) STATICSTATIC Symbol Test Conditions Value Min. Typ. Max. Unit Bvebo IE = 10 mA IC =0 mA 3.0 --- --- V Bvcbo IC = 40 mA IE =0 mA 65 --- --- V Bvcer IC = 40 mA R BE =10 Ω 65 --- --- V Icbo V CB = 50V --- --- 12 mA HFE V CE = 5.0 V IC =2 A 20 --- 120 B DYNAMICDYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit P out f=960-1215 MHz P in = 13W V CC =50V 90 100 --- W ηηc f=960-1215 MHz P in = 13W V CC =50V 38 44 --- % G P f=960-1215 MHz P in = 13W V CC =50V 8.4 --- --- dB Conditions Pulse width=10 µµsec, Duty Cycle= 10% PACKAGE MECHANICAL DATA
MSC0930.PDF 10-13-98 MS2209