MS2209 ADPOW | Alldatasheet

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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION: DESCRIPTION: DESCRIPTION: DESCRIPTION: The MS2209 is a broadband, high peak pulse power silicon NPN bipolar device specifically designed for avionics applications requiring broad bandwidth with moderate duty cycles and pulse width constraints such as ground/ship based DME/TACAN. This device is also designed for specialized applications including JTIDS applications when duty cycle is moderately higher. Gold metallization and emitter ballasting assure high reliability under Class C amplifier operation. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °° °°C) Symbol Parameter Value Unit VCC Collector Supply Voltage 50 V IC Device Current 7.0 A PDISS Power Dissipation 220 W TJ Junction Temperature (RF Pulsed Operation) +200 °° °°C TSTG Storage Temperature -65 to +200 °° °°C Thermal Data Thermal Data Thermal Data Thermal Data RTH(J-C) Junction-case Thermal Resistance 0.80 °° °°C/W Features Features Features Features

  • 225 MHz BANDWIDTH
  • COMMON BASE
  • GOLD METALLIZATION
  • CLASS C OPERATION
  • POUT = 90 W MIN. WITH 13 dB GAIN RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

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MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25 ELECTRICAL SPECIFICATIONS (Tcase = 25 ELECTRICAL SPECIFICATIONS (Tcase = 25 ELECTRICAL SPECIFICATIONS (Tcase = 25 °° °°C) C) C) C) STATIC STATIC STATIC STATIC Value Symbol Test Conditions Min. Typ. Max. Unit BV CBO I C = 40mA I E = 0mA 65 --- --- V BV EBO I E = 10mA I C=0mA 3.0 --- --- V BV CER IC= 40mA R BE = 10 ΩΩ ΩΩ 65 --- --- V hFE V CE = 5 V I C = 2A 20 --- 120 --- DYNAMIC DYNAMIC DYNAMIC DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit POUT f = 960-1215MHz V CC = 50V P IN = 13W 90 100 --- W GP f = 960-1215MHz V CC = 50V P IN = 13W 8.4 --- --- dB ηη ηη C f = 960-1215MHz V CC = 50V P IN = 13W 38 44 --- % Pulse Width = 10 µµ µµ s Duty Cycle = 10% IMPEDANCE DATA IMPEDANCE DATA IMPEDANCE DATA IMPEDANCE DATA Freq Zin (ΩΩ ΩΩ ) Z cl (ΩΩ ΩΩ ) 960 5+j9.0 10.2-j8.8 1025 6+j8.0 9.5-j7.6 Vcc=50v Pout=90w

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. TEST CIRCUIT TEST CIRCUIT TEST CIRCUIT TEST CIRCUIT

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PACKAGE MECHANICAL DATA PACKAGE MECHANICAL DATA PACKAGE MECHANICAL DATA PACKAGE MECHANICAL DATA