MS2205 ADPOW | Alldatasheet
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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION:DESCRIPTION: The MS2205 is a gold metallized, silicon NPN power transistor designed for pulsed applications with low duty cycles, such as IFF, DME, and TACAN . It can withstand infinite VSWR under rated conditions. The MS2205 is housed in the .250 " input - matched stripline package , resulting in improved broadband performance and low thermal resistance . ABSOLUTE ABSOLUTE MAXIMUM RATINGS (TMAXIMUM RATINGS (T CASECASE = 25 = 25 °°C)C) Symbol Parameter Value Unit V CBO Collector - Base Voltage 45 V V CES Collector - Emitter Voltage 45 V V EBO Emitter - Base Voltage 3.5 V IC Device Current* 1.0 A P DISS Total Power Dissipation* (T C = °°C) 21.9 W T j Junction Temperature +200 °°C T stg Storage Temperature - 65 to +150 °°C THERMAL DATATHERMAL DATA R TH(j - c) Junction - Case Thermal Resistance* 8.0 °°C/W *Applies only to rated RF amplifier operation FeaturesFeatures
- DESIGNED FOR HIGH POWER PULSED IFF, DME, TACAN APPLICATIONS
- 6.0 W (typ.) IFF 1030 – 1090 MH z
- 5.0 W (min.) DME 1025 – 1150 MHz
- 4.0 W (typ.) T ACAN 960 – 1215 MHz
- GAIN 9 dB ( typ .)
- VSWR ∞∞ :1 AT RATED CONDITIONS
- LOW THERMAL RESISTANCE
- EMITTER BALLASTED
- INPUT MATCHED COMMON - BASE CONFIGURATION RF AND MICROWAVE TRA NSISTORS AVIONICS APPLICATIONS
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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ELECTRICAL SPECIFICATIONS (TELECTRICAL SPECIFICATIONS (T CASECASE = 25 = 25 °°C)C) STATIC Value Symbol Test Conditions Min. Typ. Max. Unit BV CBO IC = 1 mA IE = 0 45 --- --- V BV CEO IC = 5 mA IB = 0 45 --- --- V BV CES IC = 5 mA V BE = 0 45 --- --- V BV EBO IE = 1 mA IC =0 3.5 --- --- V ICES V C E = 2 8 V IE = 0 mA --- --- 1 mA h FE V CE = 5 V IC = 1 00 mA 10 --- 200 --- DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit P OUT f = 1025 – 1150 M Hz P IN = .55 W V C E = 28 V 5 W G P f = 1025 – 1150 M Hz P IN = .55 W V C E = 28 V 9.5 DB Note: Pulse width = 10 µSec, Duty Cycle = 1 % This device is suitable for use under other pulse widths/duty cycle conditions. Please contact the factory for specific applications assistance .
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA