MS2200 ADPOW | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION: The MS2200 is a hermetically sealed, gold metallized silicon NPN pulse power transistor mounted in a common base balanced configuration. The MS2200 is designed for applications requiring high peak power and low duty cycles within the frequency range of 400 – 500 MHz. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit V CBO Collector - Base Voltage 65 V V CES Collector - Emitter Voltage 65 V V EBO Emitter - Base Voltage 3.5 V IC Device Current 43.2 A P DISS Power Dissipation 1167 W T J Junction Temperature +200 °°C T STG Storage Temperature - 65 to +150 °°C Thermal Data R TH(j - c) Junction - Case Thermal Resistance 0.15 °°C/W FeaturesFeatures

  • 500 Watts @ 250 µ Sec Pulse Width, 10% Duty Cycle
  • Refractory Gold Metallization
  • Emitter Ballasting And Low Resistance For Reliability and Ruggedness
  • Infinite VSWR Capability At Specified Operating Conditions
  • Input Matched, Common Base Configura tion
  • Balanced Configuration RF AND MICROWAVE TRA NSISTORS UHF PULSED APPLICATI ONS

140 COMMERCE DRIVE

MONTGOMERYVILLE, PA 18936 - 1013 PHONE: (215) 631 - 9840 FAX: (215) 631 - 9855

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25 °°C)C) STATIC Value Symb ol Test Conditions Min. Typ. Max. Units BV CBO IC = 50 mA IE = 0 mA 65 V BV CES IC = 50 mA V BE = 0 V 65 V BV EBO IE = 10 mA IC = 0 mA 3.5 V I CES V CE =30 V IE = 0 mA 15 mA h FE V CE = 5 V IC = 5 A 20 200 DYNAMIC Value Symbol Test C onditions Min. Typ. Max. Units P OUT f = 425 MHz P IN = 54 W V CE = 40 V 500 W G P f = 425 MHz P IN = 54 W V CE = 40 V 9.7 Db ηηC f = 425 MHz P IN = 54 W V CE = 40 V 50 %% Note: Pulse Width = 250µSec, Duty Cycle = 10% This device is sui table for use under other pulse width/duty cycle conditions. Please contact the factory for specific applications assistance.

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. TYPICAL PERFORMANCETYPICAL PERFORMANCE

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. TYPICAL PERFORMANCETYPICAL PERFORMANCE ( (CONTINUEDCONTINUED ))

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. TEST CIRCUITTEST CIRCUIT

Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA