MS2092

MS2092 ADPOW | Alldatasheet

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• PDF pages: 3

Technical content

MS209 2 .PDF 2 - 10 - 04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct Page 1 MS209 2 RF & MICROWAVE TRANSISTORS DESCRIPTIONDESCRIPTION The MS209 2 is an internally matched , common base silicon bipolar device optimized pulsed application in the 600 – 750 MHz frequency range. Housed in the industry standard AMPAC  metal/ceramic package, this device uses a refractory /gold over lay die geometry for ruggedness and long - term reliability. KEY FEATURES KEY FEATURES § Refractory/Gold Metallization § Internal Input Matching § Metal/Ceramic Her metic Package § P OUT = 44 0 W Min. § G P = 7.0 dB Gain APPLICATIONS/BENEFITAPPLICATIONS/BENEFITSS § Avionics Applications * Applies only to rated RF amplifier o peration ABSOLUTE MAXIMUM RATINGS (TCASE = 25°°C) Symbol Parameter Value Unit P DISS Power Dissipation* ( T C 75 °C) 1500 W I C Device Current* 32 .0 A V CC Collector - Supply Voltage* 55 V T J Junction Temperature 20 0 °C T STG Storage Temperature - 65 to +200 °C THERMAL DATA R TH(j - c) Junction - Case Thermal Resistance 0. 13 °C/W

MS209 2 .PDF 2 - 10 - 04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct Page 2 MS209 2 RF & MICROWAVE TRANSISTORS STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°°C) MS2091 Symbol Test Conditions Min. Typ. Max. Units BV CBO IC = 5 0 mA IE = 0 mA 65 V BV EBO IE = 5 mA IC = 0 mA 3.5 V BV CER IC = 50 mA R BE = 10 Ω 65 V I CES V CE = 50 V 3 5 mA I CBO V C B = 50 V 25 mA h FE V CE = 5 V IC = 1 A 15 120 DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°°C) MS2091 Symbol Test Conditions Min. Typ. Max. Units P OUT f = 600 – 750 MHz P IN = 9 0 W V CC = 50 V 445 W ηηc f = 600 – 750 MHz P IN = 9 0 W V CC = 50 V 35 % G P f = 600 – 750 MHz P IN = 9 0 W V CC = 50 V 7.0 dB Note: Pulse width = 10µSec Duty Cycle = 1%

MS209 2 .PDF 2 - 10 - 04 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct Page 3 MS209 2 RF & MICROWAVE TRANSISTORS