MS1226 MICROSEMI | Alldatasheet
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Technical content
MSC0943.PDF 10-28-98 MS1226
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS DESCRIPTION: DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-base Voltage 65 V V CEO Collector-emitter Voltage 36 V V EBO Emitter-Base Voltage 4.0 V IC Device Current 4.5 A P DISS Power Dissipation 80 W T J Junction Temperature +200 ° °C T STG Storage Temperature -65 to +150 ° °C Thermal Data Thermal Data R TH(J-C) Junction-case Thermal Resistance 2.2 ° °C/W Features Features
- 30 MHz
- 28 VOLTS
- IMD = -28 dB
- P OUT = 30 WATTS
- G P = 18 dB MINIMUM
- COMMON EMITTER CONFIGURATION
MSC0943.PDF 10-28-98 MS1226 MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 ELECTRICAL SPECIFICATIONS (Tcase = 25 ELECTRICAL SPECIFICATIONS (Tcase = 25° °C) C) STATIC STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVcbo IC = 200 mA IE = 0 mA 65 --- --- V BVces IC = 200 mA V BE = 0 V 65 --- --- V BVceo IC = 200 mA IB = 0 mA 35 --- --- V BVebo IE = 10 mA IC = 0 mA 4.0 --- --- V Icbo V CB = 30 V IE = 0 mA --- --- 1.0 mA H FE V CE = 5 V IC = 500 mA 10 --- 200 --- DYNAM DYNAMIC IC Symbol Test Conditions Value Min. Typ. Max. Unit P OUT f = 30 MHz P IN = 0.48W V CE = 28V 30 --- --- W G P f = 30 MHz P IN = 0.48W V CE = 28V 18 --- --- dB IMD f = 30 MHz P IN = 0.48W V CE = 28V --- ---- -28 dB C Cob f = 1 MHz V CB = 30V --- --- 65 pf Condition s s V CE = 28 V I CQ = 25 mA
MSC0943.PDF 10-28-98 MS1226 MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 PACKAGE MECHANICAL DATA PACKAGE MECHANICAL DATA