MS1226 ADPOW | Alldatasheet
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RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS DESCRIPTION: DESCRIPTION: DESCRIPTION: DESCRIPTION: The MS1226 is a 28V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS Symbol Paramete r Value U nit VCBO Co llector-base Voltage 65 V VCEO Co llector-emitter Voltage 36 V VEBO Emit ter-Base Voltage 4.0 V IC Dev ice Current 4.5 A PDISS Po wer Dissipation 80 W TJ Ju nction Temperature +200 C TSTG Storage Temperature -65 to +150 C ThermaThermaThermaThermal Datal Datal Datal Data RTH(J-C) Junction-case Thermal Resistance 2.2 C/W FeaturesFeaturesFeaturesFeatures
30 MHz
28 VOLTS
IMD = -28 dB POUT = 30 WATTS GP = 18 dB MINIMUM COMMON EMITTER CONFIGURATION
ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25 °°°°C)C)C)C) STATICSTATICSTATICSTATIC Symbol Test Conditions Value Min. T yp. Max. Unit BVcbo IC = 200 mA I E = 0 mA 65 --- --- V BVces IC = 200 mA V BE = 0 V 65 --- --- V BVceo IC = 200 mA I B = 0 mA 35 --- --- V BVebo IE = 10 mA I C = 0 mA 4.0 --- --- V Icbo VCB = 30 V I E = 0 mA --- --- 1.0 mA HFE VCE = 5 V I C = 500 mA 10 --- 200 --- DYNAMDYNAMDYNAMDYNAMICICICIC Symbol Test Conditions Value Min. T yp. Max. Unit POUT f = 30 MHz PIN = 0.48W VCE = 28V 30 --- --- W GP f = 30 MHz PIN = 0.48W VCE = 28V 18 --- --- dB IMD f = 30 MHz PIN = 0.48W VCE = 28V --- ---- -28 dB C Cob f = 1 MHz V CB = 30V --- --- 65 pf Conditions VCE = 28 V ICQ = 25 mA
PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA