MS102 ZSELEC | Alldatasheet
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! Sc hottk y Barrier Chip ! Guard Ring Die Construction for Transient Protection ! H i g h C u r r e n t C a p a b i l i t y A B A ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity P r o t e c t i o n A p p l i c a t i o n s C /G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01/G01D Mechanical D ata ! Cas e: DO -41, Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 0.34 grams (approx.) ! Mounting Position: Any ! Marking: Type Number Lead Free: For RoHS / Lead Free Version Maximum Ra tings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 1 of 2 MS102 – MS120 1.0 A 21 28 35 42 56 70 105 140 V 20 30 40 50 60 80 100 150 200 V P eak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR RM S Reverse Voltage VR(RMS) Av erage Rectified Output Current @T L = 75°C IO Non-Repet i tive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 30 A Forward Voltage @I F = 1.0A V FM Peak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 100°C IRM T y pical Thermal Resistance (Note 1) R/G01JL R/G01JA 88 °C/W Operati ng Temperature Range Tj -55 to +150 °C St orage Temperature Range TSTG -55 to +150 °C Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com DO-41 Di m M in Max A 24. 5 — B 4.06 5. 21 C 0. 60 0. 80 D 2.00 3. 00 A ll Dimensions in mm 0.55 0. 65 0.85 V 0.1 10 mA0.05
/G01 100 1000 0.1 1 10 100 C, JUNCTION CAPACITANCE (pF)j V ,REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance R T = 25 C f = 1.0MHz j ° 0 20 40 60 80 100 120 140 I ,INST ANTANEOUS REVERSE CURRENT (mA)R PERCENTOFRA TED PEAK REVERSE VOLTAGE (%) Fig. 5 Typical Reverse Characteristics T = 100 Cj ° T =75 Cj ° T =25 Cj ° 100 1.0 0.1 0.01 0.001 0.1 1.0 I ,INST ANTANEOUS FORWARD CURRENT (A)F V,INSTANTANEOUSFORWARDVOLTAGE(V) Fig.2TypicalForwardCharacteristics F T=25Cj ° I Pulse Width = 300 sF m 0.5 1.0 25 50 75 100 125 150 I A VERAGE FORWARD CURRENT (A)(O), T , LEAD TEMPERATURE ( C) Fig. 1 Forward Current Derating Curve L ° 2 of 2 MS102 – MS120 MS102 – MS120 Z ibo Seno Electronic Engineering Co., Ltd. www.senocn.com 1 10 100 I , PEAK FORWARD SURGE CURRENT (A)FSM NUMBEROFCYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current Single Half-Sine-Wave (JEDEC Method) T = 100 Cj ° MS102 – MS104 MS105 – MS106 MS108 – MS120 MS102 – MS104 MS106 – MS120