MS108 MICROSEMI | Alldatasheet
Document overview
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Technical content
A .081 107 2.057 2.718 Dia. Cc .160 .205 4.064 5.207 | CATHODE BAND D .028 .034 mM 864 Dia. 7 y
3 PLASTIC DO41
Microsemi Peak Reverse Peak Reverse . we © Schottky Barrier Rectifier Catalog Number Voltage Voltage Y . 9 9 9 © Guard Ring Protection wsi08 B0v sov 25 C Junction Temperature MS109 g0Vv 90v e VRRM 80 to 100 Volts MS110 100V 100V
Electrical Characteristics
Average forward current 'F(AV) 1.0 Amps TA = 120°C Square wave, ROJL = 15°C/W, L = 1/4" Maximum surge current 'FSM 50 Amps 8.3ms, half sine, TJ = 175°C Max peak forward voltage VFM .81 Volts IFM = 1.0A:TJ = 25°C* Max peak reverse current 'RM 100 pA VRRM,TJ = 25°C Typical junction capacitance CJ 45pF VR = 5.0V,W = 25°C *Pulse test: Pulse width 300 usec, Duty cycle 2% Thermal and Mechanical Characteristics Storage temperature range TsT¢ -55°C to 175°C Operating junction temp range Ty -55°C to 175°C Maximum thermal resistance L = 1/4” R@JL 15°C/W — Junction to Lead Weight .011 ounces (0.34 grams) typical 8-9-00 Rev. 1 . COLORADO a 800 Hoyt Street Broomfield, CO. 80020 icrosemi 3)" FAX: (303) 466-3775 www.microsemi.com
Typical Forward Characteristics Typical Junction Capacitance 100 _ eee coo oii eee so a a a 6 bse EEE EAE wo LT fisore I ‘& ool LTT TTT PTT C » Te [TTT i PrtT ttt tt} g — Y 5 SSS ae | LZ E-4 coh eee SS eee eee 20 7 8 SS § gE PAN ee / asics 10 £ 2 ace a a 5 19 ain eo We 123 1 10 100 LT pyre ttt PP et ee . EEE “nes goo A ETT TT ETT TT é i oO rp 6 sot eee eg a 6 sr rrrrrrrrrre > a s ,-HTT TTT TT tet tt ETT TT TTT TTT TY | ae g 2 rd o 1+ 2 3 4 5 6 7 Instantaneous Forward Voltage — Volts Figure 2 Typical Reverse Characteristics
1000 SS SSS SS SSS SSS]
< 100 eS a eee a a a ae a |
2 SSS SS SS SSS]
ee) a a cS fa _ SS eee 5 === = 2 (500 er re S& 0 BSCS 0 10 20 30 40 50 60 70 80 90 100 Reverse Voltage — Volts 8-9-00 Rev. 1