MS1077 MICROSEMI | Alldatasheet
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Page 1Copyright 2000 MSC1610.PDF 2000-11-06 WWW.Microsemi .COM MS1077 RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW RF PRODUCTS DIVISION DESCRIPTIONDESCRIPTIONDESCRIPTIONDESCRIPTION The MS1077 is a Class AB epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com KEY FEATURES KEY FEATURES KEY FEATURES KEY FEATURES !"Optimized for SSB !"30 MHz !"28 Volts !"IMD –30dB !"Common Emitter !"Gold Metallization !"POUT = 130 W PEP !"GP = 12 dB Gain APPLICATIONS/BENEFITAPPLICATIONS/BENEFITAPPLICATIONS/BENEFITAPPLICATIONS/BENEFITSSSS !"HF SSB Applications ABSOLUTE MAXIMUM RATINGS (TCASE = 25°°°°C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 35 V VEBO Emitter-Base Voltage 4.0 V IC Device Current 12 A PDISS Power Dissipation 175 W TJ Junction Temperature +200 °C TSTG Storage Temperature -65 to +150 °C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 1.0 °C/W MMSS11007777
Page 2Copyright 2000 MSC1610.PDF 2000-11-06 WWW.Microsemi .COM MS1077 RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW RF PRODUCTS DIVISION STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C MS1077 Symbol Test Conditions Min. Typ. Max. Units BVCES IC = 50 mA VBE = 0 V 70 V BVCEO IC = 100 mA IB = 0 mA 35 V BVEBO IE = 20 mA IC = 0 mA 4.0 V ICES VCE =35 V IE = 0 mA 20 mA hFE VCE = 5 V IC = 7 A 18 50 DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°C MS1077 Symbol Test Conditions Min. Typ. Max. Units POUT f = 30 MHz VCE = 28 V ICQ = 150 mA 130 W GP POUT = 130 W PEP VCE = 28 V ICQ = 150 mA 12 dB IMD * POUT = 130 W PEP VCE = 28 V ICQ = 150 mA -30 dBc ηC POUT = 130 W PEP VCE = 28 V ICQ = 150 mA 37 % COB f = 1 MHz VCB = 28 V 220 260 pF Note: * f1 = 30.00 MHz, f2 = 30.01 MHz EELLEECCTTRRIICCAALLSS
Page 3Copyright 2000 MSC1610.PDF 2000-11-06 WWW.Microsemi .COM MS1077 RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW RF PRODUCTS DIVISION PPAACCKKAAGGEE DDAATTTTAA
Page 4Copyright 2000 MSC1610.PDF 2000-11-06 WWW.Microsemi .COM MS1077 RF & MICROWAVE TRANSISTORS PRODUCT PREVIEW RF PRODUCTS DIVISION NNOOTTEESS