MS1076 ADPOW | Alldatasheet
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Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION:DESCRIPTION: The MS1076 is a 28 volt epitaxial NPN silicon planar transistor designed primarily for SSB and VHF communications. This device utilizes an emitter ballasted die geometry for maximum ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °°C) Symbol Parameter Value Unit V CBO Collector - Base Voltage 70 V V CEO Collec tor - Emitter Voltage 35 V V EBO Emitter - Base Voltage 4.0 V IC Device Current 16 A P DISS Power Dissipation 320 W T J Junction Temperature +200 °°C T STG Storage Temperature - 65 to +150 °°C Thermal DataThermal Data R TH(J - C) Junction - Case Thermal Resistance 0.7 °°C/W FeaturesFeatures
- 30 MHz
- 28 VOLTS
- GOLD METALLIZATION
- P OUT = 220 W PEP
- G P = 12 dB GAIN MINIMUM
- COMMON EMITTER CONFIGURATION RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA 18936 - 1013 PHONE: (215) 631 - 98 40 FAX: (215) 631 - 9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25 °°C)C) STATICSTATIC Value Symbol Test Conditions Min. Typ. Max. Unit BV CES IC = 100 mA V BE = 0 V 70 --- --- V BV CEO IC = 200 mA IB = 0 mA 35 --- --- V BV EBO IE = 20 mA IC = 0 mA 4.0 --- --- V ICEO V CE = 30 V IE = 0 mA --- --- 5 mA ICES V CE = 35 V I E = 0 mA --- --- 5 mA H FE V CE = 5 V IC = 7 A 15 --- 50 --- DYNAMICDYNAMIC Value Symbo l Test Conditions Min. Typ. Max. Unit P OUT f = 30 MHz V CE = 28 V I CQ = 750 mA 220 --- --- WPEP G P f = 30 MHz V CE = 28 V I CQ = 750 mA 12 --- --- dB ηηC f = 30 MHz V CE = 28 V I CQ = 750 mA 40 --- --- % IMD f = 30 MHz V CE = 28 V I CQ = 750 mA --- --- - 30 dBc C OB f = 1 MHz V CB = 28 V --- 450 --- pf Conditions : f1 = 30.000 MHz f2 = 30.001 MHz IMPEDANCE DATAIMPEDANCE DATA FREQ Z IN Z CL 30 MHz 1.2 + j0.41 1.25 + j1.92
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PACKAGE MECHANICAL DATAPACKAGE MECHANICAL DATA