MS1051 MICROSEMI | Alldatasheet
Document overview
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- PDF pages: 4
Technical content
Features
- 30 MHz
- 12.5 VOLTS
- POUT = 100 WATTS
- GPE = 12.0 dB MINIMUM
- IMD = –30 dBc
- GOLD METALLIZATION
- COMMON EMITTER CONFIGURATION RF & MICROWAVE TRANSISTORS HF SSB APLICATIONS
Microsemi reserves the right to change, without notice, the specifications and informations contained herein, Visit our website at www.microsemi.com or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25 °C) STATIC Value Symbol Test Conditions Min. T yp. Max. Unit BVCBO I C = 100mA IE = 0mA 36 --- --- V BVCES I C = 100mA VBE = 0V 36 --- --- V BVCEO I C = 100mA IB = 0mA 18 --- --- V BVEBO I E = 20mA IC = 0mA 4.0 --- --- V ICES V CE = 15V IC = 0mA --- --- 20 mA hFE V CE = 5V IC = 5mA 10 --- 200 --- DYNAMIC Value Symbol Test Conditions Min. T yp. Max. Unit POUT f = 30 MHz V CE = 12.5 V ICQ = 150mA 100 --- --- W GP f = 30 MHz V CE = 12.5 V ICQ = 150mA 11 13 --- dB IMD3* P OUT = 100 W PEP VCE = 12.5 V ICQ = 150mA --- --- -30 dBc COB f = 1 MHz V CB = 12.5 V --- 400 --- pf Conditions: f1 = 30.000MHz f2 = 30.001MHz
Microsemi reserves the right to change, without notice, the specifications and informations contained herein, Visit our website at www.microsemi.com or contact our factory direct. IMPEDANCE DATA FREQ ZIN(Ω) ZCL(Ω) 30 MHz 0.57 + j 0.78 0.80 + j 0.43 POUT = 100 WPEP, VCE = 12.5 V TEST CIRCUIT
Microsemi reserves the right to change, without notice, the specifications and informations contained herein, Visit our website at www.microsemi.com or contact our factory direct. PACKAGE MECHANICAL DATA