MS1011 ADPOW | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 3
Technical content
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. DESCRIPTION: The MS1011 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB and VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C) Symbol Parameter Value Unit V CBO Collector - Base Voltage 110 V V CEO Collector - Emitter Voltage 55 V V EBO Emitter - Base Voltage 4 V IC Device Current 40 A P DISS Power Dissipation 330 W T J Junction Temperature +200 °°C T STG Storage Temperature – 65 to +150 °°C THERMAL DATA R TH(j - c) Junction - Case Thermal Resistance 0.4 °°C/W FeaturesFeatures
- OPTIMIZED FOR SSB
- 30 MHz
- 50 VOLTS
- IMD — 30 dB
- GOLD METALLIZATION
- COMMON EMITTER
- P OUT = 250 W PEP WITH 14.5 dB GAIN RF AND MICROWAVE TRA NSISTORS HF SSB APPLICATIONS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA 18936 - 1013 PHONE: (215) 631 - 9840 FAX: (215) 631 - 9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25ELECTRICAL SPECIFICATIONS (Tcase = 25 °°C)C) STATIC Value Symbol Test Conditions Min. Typ. Max. Units BV CES IC = 200 mA V BE = 0 V 110 V BV CEO IC = 200 mA IB = 0 mA 55 V BV EBO IE = 20 mA IC = 0 mA 4 V ICEO V CE = 30 V IE = 0 mA 10 mA ICES V CE = 60 V IE = 0 mA 10 mA h FE V CE = 6 V IC = 1.4 A 15 45 DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Units P OUT f = 30 MHz V CE = 50 V ICQ = 150 mA 250 W G P * P OUT = 250 W PEP V CE = 50 V ICQ = 150 mA 14.5 dB IMD * P OUT = 250 W PEP V CE = 50 V ICQ = 150 mA – 30 dBc ç C * P OUT = 250 W PEP V CE = 50 V ICQ = 150 mA 37 % C OB f = 1 MHz V CB = 50 V 360 PF Note: Two Tone Method: f 1 = 30.00 MHz; f 2 = 30.001 MHz In Class C: G P Min. 13.5 dB. Efficiency 65% @ 30 MHz G P Min. 10 dB. Efficiency 57% @ 70 MHz
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. PACKAGE MECPACKAGE MEC HANICAL DATAHANICAL DATA