MRY1518B ANASEM | Alldatasheet
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(IMPORTANT: Please check the last page for Genuine Product Labeling) Website: www.anasemi.com Tel: +852-3590-8442 Email: sales@anasemi.com AnaSem 1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnetic Sensor Switch MRY1518B Series Rev. E13-01 Ana log Semi conductor IC AnaSem 安纳森 安纳森 安纳森 安纳森
Rev. E13-01 Products Data Sheet AnaSem Analog Semiconductor IC 1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch MRY1518B Series GENERAL DESCRIPTIONS MRY1518B series are monolithic ICs with built-in MR magnet resistive element and CMOS switch. It becomes the non-contact switch with low current consumption, high sensitivity and reliability which is combined with magnet. A horizontal magnetic field parallel to the electrode of the package can be detected by an arbitrary polarity. (N pole ⇔ S pole)
FEATURES
CMOS + MR monolithic structure
APPLICATIONS
Detection of opening and closing : Mobile phone, Notebook PC, Microwave oven, Washing machine, Rice cooker, Refrigerator, Electronic dictionary, Digital camera, etc. Detection of position : Air cylinder, Antitheft window, Digital door lock, etc. Detection of water level : Water purifier, Humidifier, Bidet, etc. Detection of rotation : Water meter, Gas meter, Wattmeter, Speed meter, etc. Power supply switch : Cordless phone, Electric toothbrush, etc. HALOGEN RoHS COMPLIANCE 21 µA (V IN =1.8V, Ta=25°C) Typ. 1.5mT -40 ~ +85°C 1.6V ~ 6.0V Typ. 1.3msec with 10 µsec width Both direction / CMOS inverter one output Horizontal direction of marked side of package (Electrode parallel both direction)
Rev. E13-01 MRY1518B Series 1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch www.anasemi.com sales@anasemi.com PRODUCTS NUMBERING GUIDE PIN CONFIGURATION / MARKING SPECIFICATION MRY1518B 15 : Typ. 1.5mT Detection sensitivity Operating voltage 18 : 1.6V ~ 6.0V A : CMOS output Design version T : SOT-23 (2.9×2.8×1.1mm) Package form B : Typ. 1.3msec with 10 µsec width Detection pulse cycle Pin Configuration No. Symbol Descriptions
1 V IN Voltage input
2 V OUT Output
3 V SS Power ground
BC BA Products specification & version D Internal rule Lot number (Top view) Vss Vin 1 2 Vout D A B C D D D D
Rev. E13-01 MRY1518B Series 1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch www.anasemi.com sales@anasemi.com BLOCK DIAGRAM ABSOLUTE MAXIMUM RATINGS Items Symbol Min. Typ. Max. Conditions Unit Operating temperature T OPR -40 - +85 °C Storage temperature T STG -50 - +125 °C Supply voltage V MAX V IN -0.3 - V IN +6.0 V Assembly temp. condition T ASY - 255 260 t=max:5sec/Tmax °C NC VSS Latch circuit Sampling circuit CMOS dr ive circuit Switch VOUT VIN ① Direction of magnetic field
Rev. E13-01 MRY1518B Series 1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch www.anasemi.com sales@anasemi.com
ELECTRICAL CHARACTERISTICS
(Unless otherwise specified, V DD =1.8V, Ta=25°C) Items Symbol Min. Typ. Max. Conditions Unit Operating voltage VIN 1.6 1.8 6.0 V Current consumption I AVG - 21 35 µA Detection pulse driving cycle ts - 1.3 2.5 Pulse wi dth : 1/128 msec “H”-level output voltage V OH 0.9V IN - - I OUT =+0.5mA V “L”-level output voltage V OL - - 0.1V IN IOUT =-0.5mA V MAGNETIC CHARACTERISTICS (Unless otherwise specified, V DD =1.8V, Ta=25°C) Items Symbol Min. Typ. Max. Unit Magnetic flux density at operating point (H →L) M OPS 1.0 * 1.5 2.2 mT Magnetic flux density at release point (L →H) M RPS 0.8 1.2 1.9 * mT Width of hysteresis M HYS 0.1 * 0.3 0.8 * mT Note : The values with [*] marks are guaranteed by design, not tested in production. MAGNETIC-ELECTRIC CONVERSION CHARACTERISTIC S-pole N-pole VOUT VOH VOL Magnetic flux density M R PS M O PS M HYS M R PN M O PN M HYS
Rev. E13-01 MRY1518B Series 1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch www.anasemi.com sales@anasemi.com MAGNETIC FLUX DENSITY AND OUTPUT VOLTAGE LEVEL Conditions Output level Magnet & Power Magnet flux density Magnet = OFF / Power = ON M = 0mT High-level Magnet = ON / Power = ON M ≧ 2.2mT Low-level Magnet = OFF / Power = ON M ≦ 0.8mT High-level DETECTION PULSE DRIVING CYCLE (SAMPLING CYCLE) OUTPUT SWITCHING TIMING CHART IDD IDD ON (Typ. 1.8 mA) IDD AVG (Typ . 21 µA) IDD OFF (Typ. 1.3µA) Awake (10 µS) Period (Typ. 1.3mS) time (V DD =1.8 V) Sleep (Output latched) Sampling pulse M OP M RP On Off Magnetic flux V OUT H-level L-level M HYS Latch Latch Latch (Typ. 1.5mT) (Typ. 1.2mT)
Rev. E13-01 MRY1518B Series 1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch www.anasemi.com sales@anasemi.com TEST CIRCUIT STANDARD MAGNET SPECIFICATIONS DETECTION DISTANCE SIMULATION (with standard magnet) 15pF (including probe capacitance) Direction of magnetic field VSS VOUT VIN A S or N N or S P-point : Magnetic flux density measuring position 3.0mm 4.0mm 0.5mm Magnetization direction for reaction of sensor Magnet maker : TDK Corp. / Japan Neodymium magnet Magnetic specification : NE047BW Size : 4.0 × 3.0 × 0.5mm Magnetic flux density (mT) Vertical distance (mm) 4 6 8 10 12 14 16 18 20 ( HD = 0mm ) Standard magnet Detection point of sensor Vertical direction (VD) 1.5mT Magnetic flux density (mT) Horizontal distance (mm) 4 6 8 10 12 14 16 18 20 ( VD = 3mm ) Horizontal direction (HD) 1.5mT Standard magnet Detection point of sensor NC
Rev. E13-01 MRY1518B Series 1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch www.anasemi.com sales@anasemi.com APPLICATION INFORMATIONS Detection of magnetic field To operate output switch, the magnetic field should be applied to the sensor with sufficient magnetic flux density and correct direction. MR series are designed to be ON-state (L-level output) when the horizontal direction magnetic field is applied in parallel to the marked side of sensor, with sufficient magnetic flux (M OPS or M OPN value) regardless of polarity of magnet. Because MR series detect the horizontal direction magnetic field, it has not influence of the reverse-magnetic field. And also, MR series detect the vertical direction magnetic field according to the level of magnetic flux, so that it is possible to apply to not only slide type but also fold type. Application example 1 -- [Fold type] In case MR series is used for fold type cellular phone, IC sense the conditions of opening and shutting of the cover by detection of the magnetic flux according to the distance between IC and magnet. In position A, output is L-level (ON-state) because the detected magnetic flux is sufficient. The magnetic flux decrease according to the magnet is moved from IC (Position A →B). Then the IC is turned H-level (OFF-state) because the magnetic flux become M RP or less (Position B →C). Top view Front view VIN VOUT N or S S or N Detection direction Magnet VD MR sensor VD VD Position A Output level = Low Position B Output level = Low → High Position C Output level = High Moving direction N or S S or N Magnetic field direction N or S Magnetic field direction S or N Moving direction Moving direction Detection direction Detection direction Moving direction (Marked side) VSS VIN VOUT 35° 35° N or S S or N
Rev. E13-01 MRY1518B Series 1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch www.anasemi.com sales@anasemi.com Application example 2 -- [Slide type & Rotary type] In the detection of the slide type, there are two ways of arrangement of magnetic field detecting direction against moving direction. One is parallel and another is cross with moving direction. In case of parallel positioning of magnetic field with moving direction [arrangement 1], the output of IC might be L-level (ON-state) → H-level (OFF-state) → L-level (ON-state) → H-level (OFF-state) due to reverse-magnetic field. To prevent from this malfunction, it is recommended to arrange the detection direction of sensor and magnetic field to be crossed with moving direction of cover [arrangement 2]. Moving direction Moving direction Moving direction Magnetic field direction Moving direction Detection direction N or S S or N N or S Magnetic field direction S or N Detection direction [Arrangement 1] Parallel the direction of detection magnetic field with the moving direction Magnet VD MR sensor Position A Output level = Low Position B Output level = Low → High HD Position C Output level = High HD MR sensor MR sensor MR sensor MR sensor Position B Output level = Low Position A Output level = High → Low Position D Output level = High Position C Output level = Low → High Magnet [Arrangement 2] Cross the direction of detection magnetic field with the moving direction
Rev. E13-01 MRY1518B Series 1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch www.anasemi.com sales@anasemi.com PACKAGE DIMENSIONS (SOT-23) 0.4 0~0.1 1.1~1.3 2.9±0.2 +0.10 –0.15 (Unit : mm) 3~7° 0.16 +0.10 –0.15 0~0.35 0~0. 1 0.45 1.1~1.3 2.9±0.2 1.6±0.15 1.9±0.2 0.95 0.95 0.65 +0.10 –0.15 2.8±0.2 0.65 +0.10 –0.15 (Marked Side) 0.4 +0.10 –0.15 0.4 +0.10 –0.15 0.4 +0.10 –0.15 Recommended land pattern 2.4 1.0 0.8 1.9 0.95 0.95 1.0 0.8 0.8 1.0
Rev. E13-01 MRY1518B Series 1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch www.anasemi.com sales@anasemi.com TAPING AND LOADING SPECIFICATIONS (SOT-23) REEL DIMENSIONS (SOT-23) (Unit : mm) ø13±0.5 ø60±1 ø178±2 90° 120° 2.0 ±0.5 9.0 ±0.5 (3,000 pcs / reel) (Unit : mm) 4.0 ±0.1 2.0 ±0.05 4.0 ±0.1 ø1.5 +0.1 3.3 ±0.1 8.0 ±0.2 1.65 max. 0.2 ±0.05 Taping direction Mark Mark
www.anasemi.com sales@anasemi.com AnaSem AnaSem may change the products described in this data sheet, or may discontinue production or services without any notice in order to supply the best products through improve the design and performance. Customers are recommended to obtain the latest data or information before placing orders in order to make sure the data or information required is the newest. It is necessary for customers to fully understand the products described in this data sheet and to use it in accordance with its specifications. The products described in this data sheet are not intended to use for the apparatus which have influence on human lives due to the failure or malfunction of the products. AnaSem Corp. is not responsible for any support to customer’s application, product design, software performance, patent infringement or service. AnaSem Corp. does not disclose or imply a guarantee or description about being licensed based on patents, copy-rights, circuit location license, or other intellectual properties associated with the devices or combinations in which the products or service of AnaSem Corp. are used or can be used, or which cover the methods. Customers should not export, directly or indirectly, any products without obtaining required licenses and approvals in advance from appropriate government agencies.
Rev. E13-01 MRY1518B Series 1.3msec High speed detection, 1.5mT High sensitivity CMOS MR Magnet Sensor Switch www.anasemi.com sales@anasemi.com GENUINE PRODUCT LEGITIMATE LABEL DEFINITION Green colored Circle “RoHS” Label Other specific c ustomized Labels Ordinary Product Information Bar Our internal Out going Check Code 3 Code Our Internal QR Check Code 2 AnaSem Logo and Brand Name (Black color Logo) Our Internal Product Check Code 1 Genuine labels MUST include our correct contact information as shown