MRW2001 MOTOROLA | Alldatasheet

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MRW2001 MRW2003MOTOROLA RF DEVICE DATA The RF Line /C0077/C0105/C0099/C0114/C0111/C0119/C0097/C0118/C0101 /C0080/C0111/C0119/C0101/C0114 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114/C0115 Designed primarily for large–signal output and driver amplifier stages in the 1.0 to 2.3 GHz frequency range.

  • Designed for Class B or C, Common Base Power Amplifiers
  • Specified 28 Volt, 2.0 GHz Characteristics: Output Power — 1.0 to 20 Watts Power Gain — 5.2 to 9.0 dB, Min Collector Efficiency — 40%, Min
  • Gold Metallization for Improved Reliability
  • Diffused Ballast Resistors
  • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. MAXIMUM RATINGS Rating Symbol Value Unit Collector–Base Voltage VCES 50 Vdc Emitter–Base Voltage VEBO 3.5 Vdc Collector Current — Continuous MRW2001 MRW2003 IC 0.25 0.5 Adc Operating Junction Temperature TJ 200 °C Storage Temperature Range Tstg –65 to +200 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, RF, Junction to Case MRW2001 MRW2003 R θJC °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 10 mA, VBE = 0) MRW2001 (IC = 20 mA, VBE = 0) MRW2003 V(BR)CES Vdc (continued) Order this document by MRW2001/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0082/C0087/C0050/C0048/C0048/C0049 /C0077/C0082/C0087/C0050/C0048/C0048/C0051 5.2–9.0 dB 1.0–2.3 GHz 1.0 – 20 W MICROWAVE POWER TRANSISTORS CASE 328A–03, STYLE 1 (GP–13)  Motorola, Inc. 1997 REV 8

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (continued) Emitter–Base Breakdown Voltage (IE = 0.2 mA, IC = 0) MRW2001 (IE = 0.25 mA, IC = 0) MRW2003 V(BR)EBO 3.5 3.5 Vdc Collector Cutoff Current MRW2001 (VCB = 28 V, IE = 0) MRW2003 ICBO — 0.5 0.5 mAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mA, VCE = 5.0 V) MRW2001 (IC = 100 mA, VCE = 5.0 V) MRW2003 hFE 120 100 DYNAMIC CHARACTERISTICS Output Capacitance MRW2001 (VCB = 28 V, IE = 0, f = 1.0 MHz) MRW2003 C ob — 4.0 5.0 pF FUNCTIONAL TESTS Common–Base Amplifier Power Gain (VCE = 28 V, Pout = 1.0 W, f = 2.0 GHz) MRW2001 G PB 9.0 — — dB Common–Base Amplifier Power Gain (VCE = 28 V, Pout = 3.0 W, f = 2.0 GHz) MRW2003 G PB 8.0 — — dB Collector Efficiency (VCE = 28 V, Pout = 1.0 W, f = 2.0 GHz) MRW2001 (VCE = 28 V, Pout = 3.0 W, f = 2.0 GHz) MRW2003 η 40 — — % Load Mismatch (VCE = 28 V, f = 2.0 GHz, Load VSWR = ∞ :1, All Phase Angles) Pout = 1.0 W MRW2001 Pout = 3.0 W MRW2003 ψ No Degradation in Output Power Saturated Output Power (VCE = 28 V, f = 2.3 GHz) MRW2001 (VCE = 28 V, f = 1.5 GHz) (VCE = 28 V, f = 1.0 GHz) (VCE = 28 V, f = 2.3 GHz) MRW2003 (VCE = 28 V, f = 1.5 GHz) (VCE = 28 V, f = 1.0 GHz) Psat1 Psat2 Psat3 1.0 1.2 1.3 3.0 3.7 4.0 W

Figure 1. Output Power versus Input Power Figure 2. Series Equivalent Input/Output Impedance Figure 3. Power Output and Efficiency versus Frequency

1.5 GHz

2 GHz

2.3 GHz

Figure 4. MTTF Factor

2.0 GHz MRW2003

2.0 GHz

Figure 5. PC Board Layouts

MRW2001 MRW2003MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS CASE 328A–03 ISSUE E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M. 1982. 2. CONTROLLING DIMENSION: INCH. STYLE 1: 1. EMITTER 2. COLLECTOR 3. BASE F R E DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.795 0.805 20.20 20.45 B 0.245 0.255 6.23 6.47 C 0.145 0.170 3.69 4.31 D 0.115 0.125 2.93 3.17 E 0.055 0.065 1.40 1.65 F 0.045 0.055 1.15 1.39 G 0.562 BSC 14.27 BSC J 0.003 0.006 0.08 0.15 K 0.260 0.375 6.60 9.52 N 0.175 0.185 4.45 4.69 Q 0.120 0.135 3.05 3.42 R 0.225 0.235 5.72 5.97 S 0.120 0.130 3.05 3.30 GD Q 2 PL –B– –A– MAM0.15 (0.006) B MT J SC K KN SEATING–T– PLANE

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