MRSM75 NEC | Alldatasheet
Document overview
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Technical content
Rotation detection MR sensor Rotation Detection sensor -Various usages for rotation detection ■ Operating with independent pole ■ Superior Temperaturestability ■ Wide operating source voltage ■ No contact detection sensor -dependable for various use DirectionofMagneticField Circuit Block
FEATURES
Ｖｃｃ ＯＵＴ ＧＮＤ A Direction B Direction
Performance Characteristics (Ta = 25±3ºC unless otherwise specified) Operating require Condition OutputVoltage When power switch is ON H = 0 .0mT(Magnetic Flux Density) {0A/m (Magnetic Field Strength)} Unfixed When magnetic field is applied To Adirection H ≧ 3.0(Typ)mT(Magnetic Flux Density) {2.4kA/m (Magnetic Field Strength)} Hi-level When magnetic field is applied To B direction H ≧ 3.0 mT(Magnetic Flux Density) {2.4kA/m (Magnetic Field Strength)} Lo-level Operating Conditions Recommended (Ta = 25±3ºC unless otherwise specified) Item Symbol Condition Min Std Max Unit Source Voltage Vcc - 3 12 30 V Load Resistance RL Vcc=12V 10.0 - - k Ambient Temperature Ta - -20 25 80 ºC Applied magnetic Field H - 3.0 (2.4) - - mT(*1 (kA/m) (*2 *1) 1 mT = 10 [G] (CGS) *2) ( ) = kA/m Electrical Characteristics (Ta = 25±3℃ unlessotherwisespecified) Item Symbol Condition Min Std Max Unit Circuit Current Icc Vcc=12V Output open 5 mA Output Voltage1 VoH RL=10 Vcc=12V Output Voltage2 VoL RL=10 Vcc=12V Response Frequency f(max) Vcc=12V 2 kHz