MRFG35010MT1 MOTOROLA | Alldatasheet

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MRFG35010MT1MOTOROLA RF DEVICE DATA The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications.

  • Typical W-CDMA Performance: -42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 180 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 900 mW Power Gain — 10 dB Efficiency — 28%
  • 9 Watts P1dB @ 3.55 GHz
  • Excellent Phase Linearity and Group Delay Characteristics
  • High Gain, High Efficiency and High Linearity
  • In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 22.7(2) 0.15(2) Watts W/°C Gate-Source Voltage VGS -5 Vdc RF Input Power Pin 33 dBm Storage Temperature Range Tstg - 65 to +150 °C Channel Temperature(1) Tch 175 °C Operating Case Temperature Range TC - 20 to +85 °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 6.6(2) °C/W MOISTURE SENSITIVITY LEVEL Test Methodology Rating Per JESD 22-A113 1 (1) For reliable operation, the operating channel temperature should not exceed 150°C. (2) Simulated. Order this document by MRFG35010MT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA

3.5 GHz, 9 W, 12 V

CASE 466-02, STYLE 1 PLD-1.5 PLASTIC  Motorola, Inc. 2003 REV 2 Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) IDSS — 2.9 — Adc Off State Leakage Current (VGS = -0.4 Vdc, V DS = 0 Vdc) IGSS — < 1.0 100 µAdc Off State Drain Current (VDS = 12 Vdc, VGS = -1.9 Vdc) IDSO — 0.1 1.0 mAdc Off State Current (VDS = 28.5 Vdc, VGS = -2.5 Vdc) IDSX — 2.0 15 mAdc Gate-Source Cut-off Voltage (VDS = 3.5 Vdc, IDS = 15 mA) VGS(th) -1.2 -1.0 -0.7 Vdc Quiescent Gate Voltage (VDS = 12 Vdc, IDQ = 180 mA) VGS(Q) -1.2 -0.95 -0.7 Vdc Power Gain (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) Gps 9.0 10 — dB Output Power, 1 dB Compression Point (VDD = 12 Vdc, IDQ = 180 mA, f = 3.55 GHz) P1dB — 9 — W Drain Efficiency (VDD = 12 Vdc, IDQ = 180 mA, Pout = 900 mW Avg., f = 3.55 GHz) /C0104D 23 28 — % Adjacent Channel Power Ratio (VDD = 12 Vdc, Pout = 900 mW Avg., IDQ = 180 mA, f = 3.55 GHz, W-CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) ACPR — -43 -40 dBc Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

Figure 1. 3.5 GHz Test Circuit Schematic Table 1. 3.5 GHz Test Circuit Component Designations and Values Freescale Semiconductor, Inc.

Figure 2. 3.5 GHz Test Circuit Component Layout Freescale Semiconductor, Inc.

Table 2. Class AB Common Source S-Parameters at V DS = 12 Vdc, IDQ = 180 mA Freescale Semiconductor, Inc.

Table 2. Class AB Common Source S-Parameters at V DS = 12 Vdc, IDQ = 180 mA (continued) Freescale Semiconductor, Inc.

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. RESIN BLEED/FLASH ALLOWABLE IN ZONE V, W, AND X. /C0095 DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.255 0.265 6.48 6.73 B 0.225 0.235 5.72 5.97 C 0.065 0.072 1.65 1.83 D 0.130 0.150 3.30 3.81 E 0.021 0.026 0.53 0.66 F 0.026 0.044 0.66 1.12 G 0.050 0.070 1.27 1.78 H 0.045 0.063 1.14 1.60 K 0.273 0.285 6.93 7.24 L 0.245 0.255 6.22 6.48 N 0.230 0.240 5.84 6.10 P 0.000 0.008 0.00 0.20 Q 0.055 0.063 1.40 1.60 R 0.200 0.210 5.08 5.33 S 0.006 0.012 0.15 0.31 U 0.006 0.012 0.15 0.31 ZONE V 0.000 0.021 0.00 0.53 ZONE W 0.000 0.010 0.00 0.25 ZONE X 0.000 0.010 0.00 0.25 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4. SOURCE 3 4 AF R L N K D B Q E P C ÉÉÉÉ ÉÉÉÉ ÉÉÉÉÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ G H ZONE X ZONE W 0.89 (0.035) X 45 5/C0034/C0095 /C009510 DRAFT ZONE V S U ÉÉÉ ÉÉÉ RESIN BLEED/FLASH ALLOWABLE J 0.160 0.180 4.06 4.57J PLD-1.5 PLASTIC Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All oper ating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. /C0069 Motorola Inc. 2003 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, Motorola Literature Distribution 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan P.O. Box 5405, Denver, Colorado 80217 81-3- 3440-3569 1-800-521-6274 or 480-768-2130 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRFG35010MT1/D◊ Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...