MRFG35003MT1 MOTOROLA | Alldatasheet

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RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB linear base station applications. Typical W–CDMA Performance: –42 dBc ACPR, 3.55 GHz, 12 Volts, IDQ = 55 mA, 5 MHz Offset/3.84 MHz BW, 64 DPCH (8.5 dB P/A @ 0.01% Probability) Output Power — 300 mWatt Power Gain — 11.5 dB Efficiency — 25% 3 Watts P1dB @ 3.55 GHz Excellent Phase Linearity and Group Delay Characteristics High Gain, High Efficiency and High Linearity In Tape and Reel. T1 Suffix = 1000 Units per 12 mm, 7 inch Reel. MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 8.1(2) 0.05(2) Watts W/°C Gate–Source Voltage VGS – 5 Vdc RF Input Power Pin dBm Storage Temperature Range Tstg – 65 to +150 Channel Temperature(1) Tch 175 Operating Case Temperature Range TC – 20 to +85 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case Class AB RθJC 18.5(2) °C/W MOISTURE SENSITIVITY LEVEL Test Methodology Rating Per JESD 22–A113 (1) For reliable operation, the operating channel temperature should not exceed 150°C. (2) Simulated. Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA

3.5 GHz, 3 W, 12 V

CASE 466–02, STYLE 1 PLD–1.5 PLASTIC  Motorola, Inc. 2003 REV 0 Freescale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Saturated Drain Current (VDS = 3.5 Vdc, VGS = 0 Vdc) IDSS 1.3 Adc Off State Leakage Current (VGS = –0.4 Vdc, VDS = 0 Vdc) IGSS < 1.0 100 µAdc Off State Drain Current (VDS = 12 Vdc, VGS = –2.5 Vdc) IDSO 450 µAdc Off State Current (VDS = 28.5 Vdc, VGS = –2.5 Vdc) IDSX < 1.0 mAdc Gate–Source Cut–off Voltage (VDS = 3.5 Vdc, IDS = 6.5 mA) VGS(th) –1.2 –0.9 –0.7 Vdc Quiescent Gate Voltage (VDS = 12 Vdc, ID = 80 mA) VGS(Q) –1.2 –0.9 –0.7 Vdc Power Gain (VDD = 12 Vdc, IDQ = 55 mA, f = 3.55 GHz) Gps 11.5 dB Output Power, 1 dB Compression Point (VDD = 12 Vdc, IDQ = 55 mA, f = 3.55 GHz) P1dB W Drain Efficiency (VDD = 12 Vdc, IDQ = 55 mA, Pout = 0.30 W Avg., f = 3.55 GHz) D Adjacent Channel Power Ratio (VDD = 12 Vdc, Pout = 0.30 W Avg., IDQ = 55 mA, f = 3.55 GHz, W–CDMA, 8.5 P/A @ 0.01% Probability, 64 CH, 3.84 MCPS) ACPR –42 –40 dBc Freescale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

0.082″ x 0.372″ Microstrip Z12 0.169″ x 0.471″ Microstrip Z13 0.196″ x 0.093″ Microstrip Z14 0.313″ x 0.338″ Microstrip Z16 0.200″ x 0.065″ Microstrip Z17 0.472″ x 0.044″ Microstrip PCB Rogers 4350, 20 mil, εr = 3.5 Figure 1. 3.5 GHz Test Circuit Schematic Table 1. 3.5 GHz Test Circuit Component Designations and Values

Description

Value, P/N or DWG Manufacturer C1, C20 7.5 pF Chip Capacitors, B Case 100A7R5JP150X ATC C2, C3, C11, C12 3.9 pF Chip Capacitors (0805) 08051J3R9BBT AVX C4, C13 10 pF Chip Capacitors, A Case 100A100JP500X ATC C5, C14 100 pF Chip Capacitors, A Case 100A101JP500X ATC C6, C15 100 pF Chip Capacitors, B Case 100B101JP500X ATC C7, C16 1000 pF Chip Capacitors, B Case 100B102JP500X ATC C8, C17 3.9 µF Chip Capacitors, B Case ATC C9, C18 0.1 µF Chip Capacitors, B Case ATC C10, C19 22 µF, 35 V Tantalum Surface Mount Capacitors ATC C21 0.7 pF Chip Capacitor (0805) 08051J0R7BBT AVX C22, C27 0.2 pF Chip Capacitors (0805) 08051J0R2BBT AVX C23, C28 0.8 pF Chip Capacitors (0805) 08051J0R8BBT AVX C24 1.0 pF Chip Capacitor, B Case 08051J1R0BBT AVX C25 1.2 pF Chip Capacitor, B Case 08051J1R2BBT AVX C26 0.5 pF Chip Capacitor, B Case 08051J0R5BBT AVX

100 Chip Resistor

Freescale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

Figure 2. 3.5 GHz Test Circuit Component Layout Freescale Semiconductor, Inc.

Table 2. Class AB Common Source S–Parameters at VDS = 12 Vdc, IDQ = 50 mA Freescale Semiconductor, Inc.

Table 2. Class AB Common Source S–Parameters at VDS = 12 Vdc, IDQ = 50 mA (continued) Freescale Semiconductor, Inc.

CASE 466–02 ISSUE B ' 3" ("$ " $ 4'3 (( 3" 6 0 !$*(" " ! $ 7' 4(" 6 ' $ ' $ A F R L N K D B Q E P C ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ G H ZONE X ZONE W ZONE V S U ÉÉÉ ÉÉÉ RESIN BLEED/FLASH ALLOWABLE J PLD–1.5 PLASTIC Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola Inc. 2003 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, Motorola Literature Distribution 3–20–1, Minami–Azabu, Minato–ku, Tokyo 106–8573, Japan P.O. Box 5405, Denver, Colorado 80217 81–3–3440–3569 1–800–521–6274 or 480–768–2130 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852–26668334 HOME PAGE: http://motorola.com/semiconductors MRFG35003MT1/D Freescale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...