MRFE6VP8600H FREESCALE | Alldatasheet

Document overview

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Technical content

Features

  • Capable of Handling >65:1 VSWR through all Phase Angles @ 50 Vdc, 860 MHz, DVB- -T (8k OFDM) 240 Watts Avg. Output Power (3 dB Input Overdrive from Rated P out)
  • Exceptional Efficiency for Class AB Analog or Digital Television Operation
  • Full Performance across Complete UHF TV Spectrum, 470- -860 MHz
  • Capable of 600 Watt CW Output Power with Adequate Thermal Management
  • Integrated Input Matching
  • Extended Negative Gate- -SourceVoltage Range of - -6.0 V to +10 V − Improves Class C Performance, e.g. in a Doherty Peaking Stage − Enables Fast, Easy and Complete Shutdown of the Amplifier
  • Characterized from 20 V to 50 V for Extended Operating Range for use with Drain Modulation
  • Excellent Thermal Characteristics
  • RoHS Compliant
  • In Tape and Reel. R6 Suffix = 150 Units, 56 mm Tape Width, 13 inch Reel. R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel.

Table 1. Maximum Ratings

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf. Select Software &

Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 1. Pin Connections

42 Drain 2

source terminal for the transistor. © Freescale Semiconductor, Inc., 2011.All rights reserved.

Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5°C unless otherwise noted) DVB- -T (8k OFDM) Single Channel. ACPR measured in 7.61 MHz Signal Bandwidth @±4 MHz Offset with an Integration Bandwidth of 4 kHz.

  1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

Select Documentation/Application Notes - - AN1955.

  1. Performance with thermal grease TIM (thermal interface material) will typically degrade by 0.05°C/W due to the increased thermal contact
  2. Each side of device measured separately.
  3. Measurement made with device in push- -pull configuration.
  4. Part internally input matched.
  5. Die capacitance value without internal matching.

Table 4. Electrical Characteristics(TA =2 5°C unless otherwise noted)(continued) DVB- -T (8k OFDM) Single Channel.

Figure 2. MRFE6VP8600HR6(HSR6) Test Circuit Component Layout — 860 MHz, DVB- -T (8k OFDM) *C8, C14, C15, C16, C17, C18 and C23 are mounted vertically. Table 5. MRFE6VP8600HR6(HSR6) TestCircuit Component Designations and Values — 860 MHz, DVB- -T (8k OFDM)

Figure 3. MRFE6VP8600HR6(HSR6) Test Circuit Schematic — 860 MHz, DVB- -T (8k OFDM)

Figure 4. Normalized VGS Quiescent versus Figure 5. Drain Current versus Gate- -Source Voltage Note: Measured with both sides of the transistor tied together.

40 Vdc

30 Vdc

20 Vdc

10 Vdc

Figure 6. Capacitance versus Drain- -Source Voltage Note: Each side of device measured separately. Figure 7. Pulsed CW Output Power versus Figure 8. Pulsed Power Gain and Drain Efficiency

Figure 9. Source Peak- -to- -Average DVB- -T (8k OFDM)

64 QAM Data Carrier Modulation

5 Symbols

7.61 MHz

Figure 10. DVB- -T (8k OFDM) Spectrum Figure 11. Single- -Carrier DVB- -T (8k OFDM) Drain Pout, OUTPUT POWER (WATTS) AVG.

64 QAM Data Carrier Modulation, 5 Symbols

Signal PAR = 9.5 dB @ 0.01% Probability on CCDF, TC =5 0°C. Figure 14. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Component Layout — 470- -860 MHz

Table 6. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Component Designations and Values — 470- -860 MHz Table 7. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Microstrips — 470- -860 MHz

Figure 15. MRFE6VP8600HR6(HSR6) Broadband Test Circuit Schematic — 470- -860 MHz

Figure 16. Broadband Pulsed Power Gain and Drain Figure 17. Broadband Pulsed Power Gain, Drain Figure 18. DVB- -T (8k OFDM) Drain Efficiency, Power Gain and Pout, OUTPUT POWER (WATTS) AVG.

860 MHz

665 MHz

470 MHz

delta marker at 4.2 MHz offset from center frequency.

Figure 19. DVB- -T (8k OFDM) Drain Efficiency, Power Gain and Pout, OUTPUT POWER (WATTS) AVG. delta marker at 4.2 MHz offset from center frequency. Figure 20. Broadband Power Gain and IRL versus Frequency Figure 21. Broadband Drain Efficiency and IMD Shoulder versus Frequency delta marker at 4.2 MHz offset from center frequency.

gate to gate, balanced configuration. from drain to drain, balanced configuration. Figure 22. Broadband Series Equivalent Source and Load Impedance — 470- -860 MHz

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data Freescale Semiconductor

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents to aid your design process. Application Notes

  • AN1908: Solder Reflow Attach Method for High Power RF Devices in Air Cavity Packages
  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
  • Electromigration MTTF Calculator
  • RF High Power Model
  • .s2p File Development Tools
  • Printed Circuit Boards For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 0 Sept. 2011 • Initial Release of Data Sheet 1 Sept. 2011 • Added Fig. 19, DVB- -T (8k OFDM) Drain Efficiency,Power Gain and IMD Shoulder versus Output Power - - 470- -860 MHz @ 700 mA to indicate efficiency gains with appropriate precorrection systems, p. 13

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 Information in this document is provided solely to enablesystem and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its productsfor any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributorsharmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516

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