MRFE6VP6300HR3_11 FREESCALE | Alldatasheet
Document overview
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- PDF pages: 15
Technical content
Features
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Device can be used Single- -Ended or in a Push- -Pull Configuration
- Qualified Up to a Maximum of 50 VDD Operation
- Characterized from 30 V to 50 V for Extended Power Range
- Suitable for Linear Application with Appropriate Biasing
- Integrated ESD Protection
- Greater Negative Gate- -Source VoltageRange for Improved Class C Operation
- Characterized with Series Equivalent Large- -Signal Impedance Parameters
- RoHS Compliant
- NI- -780- -4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 14.
- NI- -780S- -4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. For R5 Tape and Reel options, see p. 14.
Table 1. Maximum Ratings Table 2. Thermal Characteristics
50 Vdc, IDQ = 100 mA, 230 MHz
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product. Select Documentation/Application Notes - - AN1955.
- Same test circuit is used for both pulsed and CW.
Figure 1. Pin Connections
42 RFout/VDS
© Freescale Semiconductor, Inc., 2010- -2011.All rights reserved.
Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5°C unless otherwise noted)
- Each side of device measured separately.
Figure 2. MRFE6VP6300HR3(HSR3) Test Circuit Schematic Note: Same test circuit is used for both pulsed and CW. Table 5. MRFE6VP6300HR3(HSR3) Test Circuit Component Designations and Values
Figure 3. MRFE6VP6300HR3(HSR3)Test Circuit Component Layout
Figure 4. Capacitance versus Drain- -Source Voltage Note: Each side of device measured separately. Figure 5. Pulsed Output Power versus Figure 6. Pulsed Power Gain and Drain Efficiency Figure 7. Pulsed Power Gain versus
50 V24
40 V 45 V
Figure 8. Pulsed Drain Efficiency versus Figure 9. Pulsed Power Gain and Drain Efficiency
50 V35 V 40 V 45 V
Figure 14. MTTF versus Junction Temperature CW
Figure 15. Series Equivalent Source and Load Impedance
- Simulated performance at 1 dB gain compression.
Zsource = Source impedance presented from gate to gate. Zload = Load impedance presented from drain to drain. Figure 16. Simulated Source and Load Impedances Optimized for IRL,
MRFE6VP6300HR3 MRFE6VP6300HSR3 PACKAGE DIMENSIONS
MRFE6VP6300HR3 MRFE6VP6300HSR3 RF Device Data Freescale Semiconductor
MRFE6VP6300HR3 MRFE6VP6300HSR3
MRFE6VP6300HR3 MRFE6VP6300HSR3 RF Device Data Freescale Semiconductor
MRFE6VP6300HR3 MRFE6VP6300HSR3 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents to aid your design process. Application Notes
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins
- EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
- Electromigration MTTF Calculator
- RF High Power Model
- .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the Part Number link. Go to the Software & Tools tab on the parts Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION NI- -780- -4 = R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. NI- -780S- -4 = R5 Suffix = 50 Units, 32 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRFE6VP6300H and MRFE6VP6300HS parts will be available for 2 years after release of MRFE6VP6300H and MRFE6VP6300HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRFE6VP6300Hand MRFE6VP6300HS in the R3 tape and reel option.
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 0 Oct. 2010 • Initial Release of Data Sheet 1 July 2011 • Corrected pin 4 label from RFout/VGS to RFin/VGS, Fig. 1, Pin Connections, p. 1
- Changed Drain- -Source voltage from - -0.5, +125 to- -0.5, +130 in Maximum Ratings table, p. 1
- Added Total Device Dissipation to Maximum Ratings table, p. 1
- Changed V(BR)DSS Min value from 125 to 130 Vdc, Table 4, Off Characteristics, p. 2
- Tightened VGS(th) Min limit from 1.5 to 1.7 Vdc and Max limit from 3.0 to 2.7 Vdc as a result of process improvement, Table 4, On Characteristics, p. 2
- Tightened VGS(Q) Min limit from 1.7 to 2.0 Vdc and Max limit from 3.2 to 3.0 Vdc as a result of process improvement, Table 4, On Characteristics, p. 2
- Added Load Mismatch table to Table 4. Electrical Characteristics, p. 2
- MTTF end temperature on graph changed to match maximum operating junction temperature, Fig. 14, MTTF versus Junction Temperature, p. 7
- Added Fig. 16, Simulated Source and Load Impedances Optimized for IRL, Output Power and Drain Efficiency Push- -Pull table, p. 9
MRFE6VP6300HR3 MRFE6VP6300HSR3 RF Device Data Freescale Semiconductor Information in this document is provided solely to enablesystem and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its productsfor any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customers technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributorsharmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516
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