MRF9210 MOTOROLA | Alldatasheet
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MRF9210R3MOTOROLA RF DEVICE DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial an d industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 26 volt base station equipment.
- Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 2 x 950 mA IS-95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power 40 Watts Power Gain 16.5 dB Efficiency 25.5% Adjacent Channel Power 750 kHz: -46.2 dBc @ 30 kHz BW
1.98 MHz: -60 dBc @ 30 kHz BW
- Internally Matched, Controlled Q, for Ease of Use
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 40 Watts Avg. N-CDMA
- Excellent Thermal Stability
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 565 3.2 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Value (1) Unit Thermal Resistance, Junction to Case RθJC 0.31 °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF9210/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA CASE 375G-04, STYLE 1 NI-860C3 MRF9210R3
880 MHz, 200 W, 26 V
Motorola, Inc. 2004 REV 1 Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) IDSS 1 µAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) IGSS 1 µAdc ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = 10 Vdc, ID = 330 µAdc) VGS(th) 1.5 2.8 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 800 mAdc) VGS(Q) 2.5 3.3 4.5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2.2 Adc) VDS(on) 0.2 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6.7 Adc) gfs 8.8 S DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss 3.6 pF FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) (2) Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier, Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF N-CDMA Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, I DQ = 2 x 950 mA, f = 880 MHz) Gps 15.8 16.5 dB N-CDMA Drain Efficiency (VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, I DQ = 2 x 950 mA, f = 880 MHz) η 23 25.5 % Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, I DQ = 2 x 950 mA, f = 880 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) ACPR -46.2 -45 dBc Input Return Loss (VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, I DQ = 2 x 950 mA, f = 880 MHz) IRL 9 17.5 dB N-CDMA Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, I DQ = 2 x 950 mA, f = 865 MHz and 895 MHz) Gps 16.5 dB N-CDMA Drain Efficiency (VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, I DQ = 2 x 950 mA, f = 865 MHz and 895 MHz) η 25.5 % Adjacent Channel Power Ratio (VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, I DQ = 2 x 950 mA, f = 865 MHz and 895 MHz; ACPR @ 40 W, 1.23 MHz Bandwidth, 750 kHz Channel Spacing) ACPR -47.5 dBc Input Return Loss (VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, I DQ = 2 x 950 mA, f = 865 MHz and 895 MHz) IRL 15 dB Output Mismatch Stress (VDD = 26 Vdc, Pout = 40 W Avg. N-CDMA, I DQ = 2 x 950 mA, f = 880 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power (1) Each side of device measured separately. (2) Device measured in push-pull configuration. Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
Table 1. 880 MHz Test Circuit Component Designations and Values Figure 1. 880 MHz Test Circuit Component Layout Freescale Semiconductor, Inc.
Figure 7. Power Gain, Efficiency and IMD Pout, OUTPUT POWER (WATTS) AVG. Figure 8. N-CDMA Performance Output Power Figure 9. Single-Carrier Maximum N-CDMA Linear Pout , OUTPUT POWER (WATTS) AVG. Figure 10. Typical N-CDMA Spectrum
1.23 MHz BW
Freescale Semiconductor, Inc.
Figure 11. Series Equivalent Input and Output Impedance gate to gate, balanced configuration. from drain to drain, balanced configuration. Freescale Semiconductor, Inc.
MRF9210R3MOTOROLA RF DEVICE DATA NOTES Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
D Q G L K HE F C SEATING PLANE NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 3. DIMENSION H TO BE MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.140 (28.96) BASED ON 3M SCREW.4X B A T DIM A MIN MAX MIN MAX MILLIMETERS 1.335 1.345 33.91 34.16 INCHES B 0.380 0.390 9.65 9.91 C 0.180 0.224 4.57 5.69 D 0.325 0.335 8.26 8.51 E 0.060 0.070 1.52 1.78 F 0.004 0.006 0.10 0.15 G H 0.097 0.107 2.46 2.72 K 0.135 0.165 3.43 4.19 L N 0.851 0.869 21.62 22.07 Q 0.118 0.138 3.00 3.30 R 0.395 0.405 10.03 10.29 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE
1.100 BSC
0.425 BSC
27.94 BSC
10.8 BSC
J 0.2125 BSC 5.397 BSC M 0.852 0.868 21.64 22.05 S 0.394 0.406 10.01 10.31 bbb 0.010 REF 0.25 REF ccc 0.015 REF 0.38 REF MAMbbb B MT MAMbbb B MT B (FLANGE) MAMbbb B MT MAMccc B MT R (LID) S (INSULATOR) J MAMbbb B MT MAMccc B MT N (LID) M (INSULATOR) A Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All oper ating parameters, including Typicals, must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. /C0069 Motorola Inc. 2004 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, Motorola Literature Distribution 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan P.O. Box 5405, Denver, Colorado 80217 81-3- 3440-3569 1-800-521-6274 or 480-768-2130 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF9210/D◊ Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...