MRF914 MICROSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • Silicon NPN, high Frequency, To-72 packaged, Transistor
  • High Power Gain - Gmax = 15 dB ( typ) @ f = 500 MHz
  • Low Noise Figure NF = 2.5 dB ( typ) @ f = 500 MHz
  • High F T - 4.5 GHz ( typ) @ IC = 20 mAdc

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MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

MSC1325.PDF 10-25-99 MRF914 ELECTRICAL SPECIFICATIONS ( Tcase = 25 °C) STATIC (off) Symbol Test Conditions Value Min. Typ. Max. Unit BVCEO Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 12 - - Vdc BVCBO Collector-Base Breakdown Voltage (IC= 0.1 mAdc, IE=0) 20 - - Vdc BVEBO Emitter-Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 3.0 - - Vdc ICBO Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) - - 50 nA (on) HFE DC Current Gain (IC = 20 mAdc, VCE = 10 Vdc) 30 - 200 - DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit fT Current-Gain - Bandwidth Product (IC = 20 mAdc, VCE = 10 Vdc, f = .5 GHz) - 4.5 - GHz CCB Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) - 0.7 - pF Functional Symbol Test Conditions Value Min. Typ. Max. Unit MAG Maximum Available Gain (IC = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) - 12 - dB S |21| 2 Insertion Gain (IC = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) 10 11 - dB NF Noise Figure (IC = 5.0 mAdc, VCE = 10 Vdc, f = 500 MHz) - 2.5 - dB G max Maximum Available Power Gain (IC = 20 mAdc, VCE = 10 Vdc, f = 500 MHz) - 15 - dB

Table 1. Common Emitter S-Parameters, @ VCE = 10 V, IC = 20 mA

MSC1325.PDF 10-25-99 MRF914