MRF9085 MOTOROLA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
MRF9085LR3 MRF9085LSR3MOTOROLA RF DEVICE DATA The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial an d industrial applications with frequencies from 865 to 895 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment.
- Typical CDMA Performance @ 880 MHz, 26 Volts, IDQ = 700 mA IS-97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power 20 Watts Power Gain 17.9 dB Efficiency 28% Adjacent Channel Power 750 kHz: -45.0 dBc @ 30 kHz BW 1.98 MHz: -60.0 dBc @ 30 kHz BW
- Internally Matched, Controlled Q, for Ease of Use
- High Gain, High Efficiency and High Linearity
- Integrated ESD Protection
- Designed for Maximum Gain and Insertion Phase Flatness
- Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 90 Watts CW Output Power
- Excellent Thermal Stability
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Low Gold Plating Thickness on Leads, 40µ″ Nominal.
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 250 1.43 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Value (1) Unit Thermal Resistance, Junction to Case RθJC 0.7 °C/W (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF9085/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF9085LR3 MRF9085LSR3
880 MHz, 90 W, 26 V
CASE 465-06, STYLE 1 NI-780 MRF9085LR3 CASE 465A-06, STYLE 1 NI-780S MRF9085LSR3 Motorola, Inc. 2004 REV 9 Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model MRF9085LR3 MRF9085LSR3 M2 (Minimum) M1 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS 1 µAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS 1 µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2.0 4.0 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) VGS(Q) 3.7 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2 Adc) VDS(on) 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) gfs 8.0 S DYNAMIC CHARACTERISTICS (1) Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss 73 pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss 2.9 pF (1) Part is internally input matched. (continued) Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
MRF9085LR3 MRF9085LSR3MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS - continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP , IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) Gps 17 17.9 dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP , IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) η 36 40 % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP , IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IMD -31 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP , IDQ = 700 mA, f1 = 880.0 MHz, f2 = 880.1 MHz) IRL -21 -9 dB Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W PEP , IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) Gps 17.9 dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 90 W PEP , IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) η 40.0 % 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 90 W PEP , IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) IMD -31 dBc Input Return Loss (VDD = 26 Vdc, Pout = 90 W PEP , IDQ = 700 mA, f1 = 865.0 MHz, f2 = 865.1 MHz) IRL -16 dB Power Output, 1 dB Compression Point, CW (VDD = 26 Vdc, IDQ = 700 mA, f1 = 880.0 MHz) P1dB 105 W Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f1 = 880.0 MHz) Gps 17.5 dB Drain Efficiency (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f1 = 880.0 MHz) η 51 % Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 700 mA, f = 880.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Power Output, 1 dB Compression Point, CW (1) (VDD = 26 Vdc, IDQ = 700 mA, f1 = 960 MHz) P1dB 105 W (1) These values are derived from a 960 MHz optimized test fixture. Values are not applicable to Figures 1 and 2. Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
Figure 3. Class AB Broadband Circuit Performance Figure 4. Power Gain, Efficiency, IMD versus Figure 5. Intermodulation Distortion Products Pout, OUTPUT POWER (WATTS) AVG.Pout, OUTPUT POWER (WATTS) CW AVG. Figure 6. Power Gain, Efficiency versus Output Figure 7. Power Gain, Efficiency, ACPR versus
1.98 MHz
Freescale Semiconductor, Inc.
Figure 8. Series Equivalent Input and Output Impedance power, drain efficiency and intermodulation distortion. Freescale Semiconductor, Inc.
MRF9085LR3 MRF9085LSR3MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS MRF9085LR3 NI-780 CASE 465-06 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 1.335 1.345 33.91 34.16 B 0.380 0.390 9.65 9.91 C 0.125 0.170 3.18 4.32 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 G 1.100 BSC 27.94 BSC H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 N 0.772 0.788 19.60 20.00 Q .118 .138 3.00 3.51 R 0.365 0.375 9.27 9.53 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE D G K C E H S F S 0.365 0.375 9.27 9.52 M 0.774 0.786 19.66 19.96 aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF Q2X MAMbbb B MT MAMbbb B MT B B (FLANGE) SEATING PLANE MAMccc B MT MAMbbb B MT AA (FLANGE) T N (LID) M (INSULATOR) MAMaaa B MT (INSULATOR) R MAMccc B MT (LID) MRF9085LSR3 NI-780S CASE 465A-06 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.805 0.815 20.45 20.70 B 0.380 0.390 9.65 9.91 C 0.125 0.170 3.18 4.32 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.774 0.786 19.61 20.02 R 0.365 0.375 9.27 9.53 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE D K C E H F U (FLANGE) Z (LID) bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF aaa 0.005 REF 0.127 REF S 0.365 0.375 9.27 9.52 N 0.772 0.788 19.61 20.02 MAMbbb B MT B B (FLANGE) SEATING PLANE MAMccc B MT MAMbbb B MT A A (FLANGE) T N (LID) M (INSULATOR) MAMccc B MT MAMaaa B MT R (LID) S (INSULATOR) Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All oper ating parameters, including Typicals, must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. /C0069 Motorola Inc. 2004 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, Motorola Literature Distribution 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan P.O. Box 5405, Denver, Colorado 80217 81-3- 3440-3569 1-800-521-6274 or 480-768-2130 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF9085/D◊ Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...