MRF9045M MOTOROLA | Alldatasheet

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MRF9045M MRF9045MR1MOTOROLA RF DEVICE DATA The RF Sub–Micron MOSFET Line /C0082/C0070 /C0080/C0111/C0119/C0101/C0114 /C0070/C0105/C0101/C0108/C0100 /C0069/C0102/C0102/C0101/C0099/C0116 /C0084/C0114/C0097/C0110/C0115/C0105/C0115/C0116/C0111/C0114 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequen- cies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large–signal, common–source amplifier applications in 28 volt base station equipment.

  • Typical Performance at 945 MHz, 28 Volts Output Power – 45 Watts PEP Power Gain – 18.5 dB Efficiency – 41% (Two Tones) IMD – –31 dBc
  • Integrated ESD Protection
  • Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,

45 Watts (CW) Output Power

  • Excellent Thermal Stability
  • Characterized with Series Equivalent Large–Signal Impedance Parameters
  • Moisture Sensitivity Level 3
  • RF Power Plastic Surface Mount Package
  • Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS 65 Vdc Gate–Source Voltage VGS +15, –0.5 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 156(1) 1.25(1) Watts W/°C Storage Temperature Range Tstg –65 to +150 °C Operating Junction Temperature TJ 150 °C ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Typical) Machine Model M2 (Typical) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R θJC 0.8(1) °C/W (1) Simulated NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF9045M/D /C0077/C0079/C0084/C0079/C0082/C0079/C0076/C0065 SEMICONDUCTOR TECHNICAL DATA /C0077/C0082/C0070/C0057/C0048/C0052/C0053/C0077 /C0077/C0082/C0070/C0057/C0048/C0052/C0053/C0077/C0082/C0049

945 MHz, 45 W, 28 V

LATERAL N–CHANNEL BROADBAND RF POWER MOSFET CASE 1265–06, STYLE 1 (TO–270) PLASTIC  Motorola, Inc. 2000 REV 0

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0) IDSS — — 1 µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) IGSS — — 1 µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 150 µAdc) VGS(th) 2 — 4 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 350 mAdc) VGS(Q) — 3.7 — Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) — 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3 Adc) gfs — 4 — S DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) C iss — 74 — pF Output Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) C oss — 39 — pF Reverse Transfer Capacitance (VDS = 28 Vdc, VGS = 0, f = 1 MHz) C rss — 1.9 — pF (continued)

MRF9045M MRF9045MR1MOTOROLA RF DEVICE DATA ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture) Two–Tone Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) G ps 17 18.5 — dB Two–Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 38 41 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD — –31 –28 dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL 9 15 — dB Two–Tone Common–Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) G ps — 18.5 — dB Two–Tone Drain Efficiency (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η — 41 — % 3rd Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD — –31 — dBc Input Return Loss (VDD = 28 Vdc, Pout = 45 W PEP, IDQ = 350 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL — 13 — dB

Figure 9. Series Equivalent Input and Output Impedance Zin = Complex conjugate of source impedance. IMD, bias current and frequency. power, drain efficiency and intermodulation distortion.

MRF9045M MRF9045MR1MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS (TO–270) CASE 1265–06 ISSUE E DATUM PLANE BOTTOM VIEW E EXPOSED HEATSINK AREA A B D H PIN ONE ID ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ D AMaaa D AMaaa D NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M–1994. 3. DATUM PLANE –H– IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS “D1” AND “E1” DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS “D1” AND “E1” DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE –H–. 5. DIMENSION b1 DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE b1 DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS –A– AND –B– TO BE DETERMINED AT DATUM PLANE –H–. 7. DIMENSION A2 APPLIES WITHIN ZONE “J” ONLY. NOTE 7 c1 F ZONE J A DIM A MIN MAX MIN MAX MILLIMETERS .076 .084 1.93 2.13 INCHES A1 .038 .044 0.96 1.12 A2 .040 .042 1.02 1.07 D .416 .424 10.57 10.77 D1 .376 .384 9.55 9.75 D2 .290 .320 7.37 8.13 D3 .016 .024 0.41 0.61 E .436 .444 11.07 11.28 E1 .236 .244 5.99 6.20 E2 .066 .074 1.68 1.88 E3 .150 .180 3.81 4.57 E4 .058 .066 1.47 1.68 F b1 .193 .199 4.90 5.06 c1 .007 .011 0.18 0.28 aaa .025 BSC .004

0.64 BSC

0.10 PIN 1 PIN 2 PIN 3 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN : Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 Technical Information Center: 1–800–521–6274 HOME PAGE : http://www.motorola.com/semiconductors/ MRF9045M/D