MRF904 ADPOW | Alldatasheet
Document overview
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Technical content
Features
- Silicon NPN, high Frequency, To - 72 packaged, Transistor
- High Power Gain - GU(max): 11 dB (typ) @ f = 450 MHz 7 dB (typ) @ f = 1 GHz
- Low Noise Figure NF = 1.5 dB (typ) @ f = 450 MHz
- High F T - 4 GHz (typ) @ IC = 15 mAdc
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA 18936 - 1013 PHONE: (215) 631 - 9840 FAX: (215) 631 - 9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. ELECTRICAL SPECIFICATIONS (Tcase = 25°C) STATIC (off) Value Symbol Test Conditions Min. Typ. Max. Unit BVCEO Collector - Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Vdc BVCBO Collector - Base Breakdown Voltage (IC= .1 mAdc, IE=0) Vdc BVEBO Emitter - Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0) 3.0 - Vdc ICBO Collector Cutoff Current (VCE = 15 Vdc, IE = 0 Vdc) nA (on) HFE DC Curr ent Gain (IC = 5.0 mAdc, VCE = 5 Vdc) 200 DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit fT Current - Gain - Bandwidth Product (IC = 15 mAdc, VCE = 10 Vdc, f = 1 GHz) 4.0 GHz CCB Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) 1.5 pF NF Noise Figure (IC = 5.0 mAdc, VCE = 6.0 Vdc, f = 450 MHz) 1.5 dB
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Table 1. Common Emitter S - Parameters, @ VCE = 5 V, IC = 6 mA
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct.