MRF9030MR1 MOTOROLA | Alldatasheet

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The RF Sub–Micron MOSFET Line N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen- cies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. Typical Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 20 dB Efficiency — 41% (Two Tones) IMD — –31 dBc Integrated ESD Protection Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW) Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Moisture Sensitivity Level 3 Dual–Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. TO–272 Available in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. TO–270 Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDSS Vdc Gate–Source Voltage VGS +15, –0.5 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 139 0.93 Watts W/°C Storage Temperature Range Tstg –65 to +150 Operating Junction Temperature TJ 175 ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M2 (Minimum) Charge Device Model MRF9030MR1 MRF9030MBR1 C7 (Minimum) C6 (Minimum) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 1.08 °C/W NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF9030M/D SEMICONDUCTOR TECHNICAL DATA

945 MHz, 30 W, 26 V

LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs CASE 1337–01, STYLE 1 (TO–272 DUAL LEAD) PLASTIC (MRF9030MBR1) CASE 1265–07, STYLE 1 (TO–270) PLASTIC (MRF9030MR1)  Motorola, Inc. 2002 REV 3

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS µAdc Gate–Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) VGS(th) 2.9 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) 3.8 Vdc Drain–Source On–Voltage (VGS = 10 Vdc, ID = 0.7 Adc) VDS(on) 0.23 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs 2.7 S DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss 1.2 pF FUNCTIONAL TESTS (In Motorola Test Fixture) Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD –31 –28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL –13 dB Two–Tone Common–Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps dB Two–Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η 40.5 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD –31 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL –12 dB

Figure 1. 930–960 MHz Broadband Test Circuit Schematic Table 1. 930 – 960 MHz Broadband Test Circuit Component Designations and Values

Description

Value, P/N or DWG Manufacturer Short Ferrite Bead, Surface Mount 95F786 Newark Long Ferrite Bead, Surface Mount 95F787 Newark C1, C7, C14, C15 47 pF Chip Capacitors, B Case 100B470JP 500X ATC 0.6–4.5 Variable Capacitor, Gigatrim 44F3360 Newark C3, C11 3.9 pF Chip Capacitors, B Case 100B3R6BP 500X ATC C4, C12 0.8–8.0 Variable Capacitors, Gigatrim 44F3360 Newark C5, C6 6.8 pF Chip Capacitors, B Case 100B7R5JP 500X ATC C8, C16, C17 10 µF, 35 V Tantulum Chip Capacitors 93F2975 Newark C9, C10 10 pF Chip Capacitors, B Case 100B100JP 500X ATC C13 1.8 pF Chip Capacitor, B Case (MRF9030MR1) 0.6–4.5 Variable Capacitor, Gigatrim (MRF9030MBR1) 100B1R8BP 44F3360 ATC Newark C18 220 µF Electrolytic Chip Capacitor 14F185 Newark L1, L2 12.5 nH Coilcraft Inductors A04T–5 Coilcraft WB1, WB2 20 mil Brass Shim (0.250 x 0.250) RF–Design Lab RF–Design Lab PCB Etched Circuit Board

900 MHz µ250/Viper Rev 02

Figure 2. 930–960 MHz Broadband Test Circuit Component Layout (MRF9030MR1) Figure 3. 930–960 MHz Broadband Test Circuit Component Layout (MRF9030MBR1)

900 MHz

Figure 9. Power Gain, Efficiency and IMD

= Complex conjugate of source impedance. IMD, bias current and frequency. Figure 10. Series Equivalent Input and Output Impedance (MRF9030MR1)

= Complex conjugate of source impedance. IMD, bias current and frequency. Figure 11. Series Equivalent Input and Output Impedance (MRF9030MBR1)

CASE 1265–07 ISSUE F BOTTOM VIEW E EXPOSED HEATSINK AREA A B D H PIN ONE ID ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ ÇÇÇÇ D 555 555 (4? ( 4 ? 2< ( 4 4 , (, (4 ( ,4( 9< < , , ( ( , , 4 2( (, 2(( 2( (, (E 9 , < ( 4 4 “F , “(F < , 4 < ( 4(< ( 4 4 “F , “(F 2 , ,( ( ( , , ( < ( 4 A ( ,, < , ,( ,, 42, ( < , (E(44 2( A ( 4 < , ( ( ( ( , , ( < ( 4 , , ( “HF < ( 4 4 “F , “(F < , 4 < ( 4(< ( 4 4 “F , “(F 2 , ,( ( ( , , ( NOTE 7 F ZONE J A <:4 <:4 PIN 1 PIN 2 PIN 3 9( ? < , < , < 4 (TO–270) PLASTIC (MRF9030MR1)

CASE 1337–01 ISSUE O (TO–272 DUAL LEAD) PLASTIC (4? ( 4 ? 2< ( 4 4 , (, (4 ( ,4( 9<0 < < , , ( ( , (, , 4 2( (, 2(( 2( (, (E 9 , < ( 4

4 FF , F(F

< , 4 < ( 4(< ( 4 2 , ,( ( ( , , ( < ( 4 FAF ( ,, < , ,( ,, 42, ( < , (E(44 2( FAF ( 4 < , ( ( ( ( , , ( < ( 4 , , ( FHF H C A B 2X b1 A PIN ONE ID D E PIN ONE ID Y Y VIEW Y–Y <:4 <:4 9( ? < , < , < 4 <:4 PIN 3 555 555 <:4 (MRF9030MBR1)

Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. MOTOROLA and the logo are registered in the US Patent & Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. 2002. How to reach us: USA/EUROPE/Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1–303–675–2140 or 1–800–441–2447 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9030M/D