MRF9030LR1 MOTOROLA | Alldatasheet

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The RF Sub-Micron MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequen- cies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. Typical Two-Tone Performance at 945 MHz, 26 Volts Output Power — 30 Watts PEP Power Gain — 19 dB Efficiency — 41.5% IMD — -32.5 dBc Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large-Signal Impedance Parameters In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel. Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS Vdc Gate-Source Voltage VGS - 0.5, +15 Vdc Total Device Dissipation @ TC = 25°C MRF9030LR1 Derate above 25°C MRF9030LSR1 PD 0.53 117 0.67 Watts W/°C Storage Temperature Range Tstg - 65 to +150 Operating Junction Temperature TJ 200 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case MRF9030LR1 MRF9030LSR1 RθJC 1.9 1.5 °C/W ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M1 (Minimum) NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF9030/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF9030LR1 MRF9030LSR1

945 MHz, 30 W, 26 V

CASE 360B-05, STYLE 1 NI-360 MRF9030LR1 CASE 360C-05, STYLE 1 NI-360S MRF9030LSR1  Motorola, Inc. 2003 REV 4 Freescale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) IDSS µAdc Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) IDSS µAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 µAdc) VGS(th) 2.9 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) VGS(Q) 3.8 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.7 Adc) VDS(on) 0.19 0.4 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs S DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss 49.5 pF Output Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss 26.5 pF Reverse Transfer Capacitance (VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss pF (continued) Freescale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) η 41.5 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IMD -32.5 -28 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) IRL -15.5 dB Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps dB Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) η 41.5 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IMD -33 dBc Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) IRL -14 dB Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) P1dB W Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Gps dB Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) η Output Mismatch Stress (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f = 945.0 MHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) Ψ No Degradation In Output Power Freescale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

Figure 1. 945 MHz Broadband Test Circuit Schematic Figure 2. 945 MHz Broadband Test Circuit Component Layout

900 MHz

Freescale Semiconductor, Inc.

Figure 8. Power Gain, Efficiency and IMD Freescale Semiconductor, Inc.

Figure 9. Series Equivalent Input and Output Impedance Freescale Semiconductor, Inc.

Freescale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

Freescale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

Freescale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

G E C SEATING PLANE DIM A MIN MAX MIN MAX MILLIMETERS 0.795 0.805 20.19 20.45 INCHES B 0.225 0.235 5.72 5.97 C 0.125 0.175 3.18 4.45 D 0.210 0.220 5.33 5.59 E 0.055 0.065 1.40 1.65 F 0.004 0.006 0.10 0.15 G

0.562 BSC

14.28 BSC

H 0.077 0.087 1.96 2.21 K 0.220 0.250 5.59 6.35 M 0.355 0.365 9.02 9.27 Q 0.125 0.135 3.18 3.43 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE Q M A M aaa B M T NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. R 0.227 0.233 5.77 5.92 S 0.225 0.235 5.72 5.97 N 0.357 0.363 9.07 9.22 aaa

0.005 REF

0.13 REF

0.010 REF

0.25 REF

0.015 REF

0.38 REF

M A M bbb B M T D K B B (FLANGE) H F M A M ccc B M T M A M bbb B M T A M (INSULATOR) A T N (LID) M A M ccc B M T R (LID) S (INSULATOR) M A M aaa B M T CASE 360C-05 ISSUE D NI-360S MRF9030LSR1 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE DIM A MIN MAX MIN MAX MILLIMETERS 0.375 0.385 9.53 9.78 INCHES B 0.225 0.235 5.72 5.97 C 0.105 0.155 2.67 3.94 D 0.210 0.220 5.33 5.59 E 0.035 0.045 0.89 1.14 F 0.004 0.006 0.10 0.15 H 0.057 1.45 K 0.085 0.115 2.16 2.92 M 0.355 0.365 9.02 9.27 E C SEATING PLANE 0.067 1.70 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. S 0.225 0.235 5.72 5.97 aaa H F M A M ccc B M T R (LID) S (INSULATOR) M A M aaa B M T M A M bbb B M T D B B (FLANGE) M A M ccc B M T M A M bbb B M T M (INSULATOR) T N (LID) A (FLANGE) A K PIN 3 N 0.357 0.363 9.07 9.22 R 0.227 0.23 5.77 5.92 Freescale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Motorola Inc. 2003 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, Motorola Literature Distribution 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan P.O. Box 5405, Denver, Colorado 80217 81-3-3440-3569 1-800-521-6274 or 480-768-2130 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF9030/D Freescale Semiconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...