MRF8VP13350GN

MRF8VP13350N NXP | Alldatasheet

Document overview

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Technical content

Features

• Internally input matched for ease of use
• Device can be used single--ended or in a push--pull configuration
• Qualified up to a maximum of 50 V DDoperation
• Suitable for linear applications with appropriate biasing
• Integrated ESD protection TypicalApplications
• 915 MHz industrial heating/welding systems
• 1300 MHz particle accelerators
• 900 MHz TETRA base stations Document Number: MRF8VP13350N Rev. 2, 02/2017 NXPSemiconductors Technical Data 700–1300MHz,350WCW,50V RFPOWERLDMOSTRANSISTORS MRF8VP13350N MRF8VP13350GN OM--780--4L PLASTIC MRF8VP13350N OM--780G--4L PLASTIC MRF8VP13350GN (Top View) Drain A3 1 Figure1.PinConnections 4 2 Drain B Gate A Gate B Note: Exposed backside of the package is the source terminal for the transistor.  2015–2017 NXP B.V.

Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage VDSS –0.5, +100 Vdc Gate--Source Voltage VGS –6.0, +10 Vdc Storage Temperature Range Tstg –65 to +150 °C Case Operating Temperature Range TC –40 to +150 °C Operating Junction Temperature Range (1,2) TJ –40 to +225 °C Table2.ThermalCharacteristics Characteristic Symbol Value (2,3) Unit Thermal Resistance, Junction to Case CW: Case Temperature 93 °C, 350 W CW, 50 Vdc, IDQ(A+B) = 100 mA, 915 MHz RθJC 0.24 °C/W Thermal Impedance, Junction to Case Pulse: Case Temperature 76 °C, 350 W Peak, 100 µsec Pulse Width, 20% Duty Cycle, 50 Vdc, IDQ(A+B) = 100 mA, 1300 MHz ZθJC 0.04 °C/W Table3.ESDProtectionCharacteristics TestMethodology Class Human Body Model (per JESD22--A114) 1C, passes 1500 V Machine Model (per EIA/JESD22--A115) A, passes 100 V Charge Device Model (per JESD22--C101) IV, passes 2000 V Table4.MoistureSensitivityLevel TestMethodology Rating PackagePeakTemperature Unit Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 °C Table5.ElectricalCharacteristics (T A = 25 °C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OffCharacteristics (4) Zero Gate Voltage Drain Leakage Current (V DS = 100 Vdc, VGS= 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (V DS = 48 Vdc, VGS= 0 Vdc) IDSS — — 1 µAdc Gate--Source Leakage Current (V GS= 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc OnCharacteristics Gate Threshold Voltage (4) (V DS = 10 Vdc, ID = 460 µAdc) VGS(th) 1.3 1.9 2.3 Vdc Gate Quiescent Voltage (V DD= 50 Vdc, IDQ(A+B) = 100 mAdc, Measured in Functional Test) VGS(Q) 1.7 2.2 2.7 Vdc Drain--Source On--Voltage (4) (V GS= 10 Vdc, ID = 1.3 Adc) VDS(on) 0.1 0.21 0.3 Vdc 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators . 4. Each side of device measured separately. (continued)

Table5.ElectricalCharacteristics (T A = 25 °C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit FunctionalTests (1,2)(In NXP Narrowband Test Fixture, 50 ohm system) VDD= 50 Vdc, IDQ(A+B) = 100 mA, Pout= 350 W Peak (70 W Avg.), f = 1300 MHz, 100 µsec Pulse Width, 20% Duty Cycle Power Gain Gps 17.5 19.2 20.5 dB Drain Efficiency ηD 55.0 58.0 — % Table6.LoadMismatch/Ruggedness (In NXP Test Fixture, 50 ohm system) IDQ(A+B) = 100 mA Frequency (MHz) SignalType VSWR Pin (W) TestVoltage,VDD Result

1300 Pulse

(100 µsec, 20% Duty Cycle) > 20:1 at all Phase Angles

9.6 Peak

(3 dB Overdrive)

50 No Device Degradation

Table7.OrderingInformation Device TapeandReelInformation Package MRF8VP13350NR3 R3 Suffix = 250 Units, 32 mm Tape Width, 13--inch Reel OM--780--4L MRF8VP13350GNR3 OM--780G--4L 1. Part internally input matched. 2. Measurementmadewithdeviceinstraightleadconfigurationbeforeanyleadformingoperationisapplied.Leadformingisusedforgullwing (GN) parts.

VDS, DRAIN--SOURCEVOLTAGE(VOLTS) Figure2.CapacitanceversusDrain--SourceVoltage C, CAP ACIT ANCE (pF) Note:Each side of device measured separately. IDQ(A+B) = 100 mA Figure3.NormalizedVGS versusQuiescent CurrentandCaseTemperature NORMALIZEDVGS(Q) TC, CASETEMPERATURE(°C) 1.06 1.05 1.04 1.02 1.01 1.03 0.99 0.98 0.97 0.96 0.95 0.94 100 --50 0 --25 25 50 75 500 mA 1500 mA VDD = 50 Vdc 100 --2.216 IDQ(mA) Slope(mV/°° °°C) 500 --1.894 1500 --1.648 2500 --1.420 1000 30 50 Coss Crss 2500 mA Measured with ±30 mV(rms)ac @1 MHz VGS = 0 Vdc

Table8.915MHzPerformance (In NXP Reference Circuit, 50 ohm system) VDD= 48 Vdc, IDQ(A+B) = 100 mA, TC = 25°C Frequency (MHz) Pin (W) Gps (dB) ηη ηηD (%) Pout (W) 902 3.5 20.1 64.7 359 915 3.0 20.7 67.5 355 928 3.5 20.1 68.7 361 Table9.LoadMismatch/Ruggedness (In NXP Reference Circuit) Frequency (MHz) Signal Type VSWR Pin (W) TestVoltage,VDD Result

915 CW > 10:1 at all

9.0 (3 dB Overdrive)

48 No Device

Figure4.MRF8VP13350NReferenceCircuitComponentLayout—915MHz *C12, C13, C25 and C26 are mounted vertically. MRF8VP13350N Rev. 0 C1 C6 C5 C9 C27 C14 C15 C16 C17 C10 C11 C12* C13* C20 C21 C24 C25* C26* C22 C23 C18 C19 VGG VDD Table10.MRF8VP13350NReferenceCircuitComponentDesignationsandValues—915MHz Part Description PartNumber Manufacturer C1 62 pF Chip Capacitor ATC100B620JT500XT ATC C2, C5 4.7 pF Chip Capacitors ATC600F4R7BT250XT ATC C3, C7, C14, C15, C22, C23 10 µF Chip Capacitors GRM32ER61H106KA12L Murata C4, C6, C16, C17, C18, C19 47 pF Chip Capacitors ATC600F470JT250XT ATC C8, C9 3.9 pF Chip Capacitors ATC600F3R9BT250XT ATC C10, C11 12 pF Chip Capacitors ATC800B120JT500XT ATC C12, C13 5.6 pF Chip Capacitors ATC800B5R6CT500XT ATC C20, C21 2.4 pF Chip Capacitors ATC800B2R4BT500XT ATC C24 2.7 pF Chip Capacitor ATC800B2R7BT500XT ATC C25, C26 39 pF Chip Capacitors ATC600S390JT250XT ATC C27 470 µF Electrolytic Capacitor MCGPR63V477M13X26-RH Multicomp Q1 RF Power LDMOS Transistor MRF8VP13350N NXP R1, R2 6.2 Ω, 1/4 W Chip Resistors CRCW12066R20FKEA Vishay PCB Rogers RO4350B, 0.020 ″,εr= 3.66 — MTL

Z1 1.218 ″ ×0.044 ″Microstrip Z2 0.114 ″ ×0.044 ″45 °Taper Microstrip Z3 0.794 ″ ×0.044 ″45 °Taper Microstrip Z4 0.101 ″ ×0.044 ″45 °Taper Microstrip Z5 0.794 ″ ×0.044 ″45 °Taper Microstrip Z6 0.101 ″ ×0.044 ″45 °Taper Microstrip Z7 0.794 ″ ×0.044 ″Microstrip Z8 0.080 ″ ×0.044 ″Microstrip Z9 0.500 ″ ×0.094 ″Microstrip Z10 0.010 ″ ×0.642 ″Microstrip Z11 0.247 ″ ×0.642 ″Microstrip Z12 0.170 ″ ×0.642 ″Microstrip Z13 0.044 ″ ×0.050 ″Microstrip Z14 0.098 ″ ×0.044 ″45 °Taper Microstrip Z15 0.489 ″ ×0.044 ″45 °Taper Microstrip Z16 0.331 ″ ×0.044 ″Microstrip Z17 0.044 ″ ×0.050 ″Microstrip Z18 0.098 ″ ×0.044 ″45 °TaperMicrostrip Z19 0.489 ″ ×0.044 ″45 °TaperMicrostrip Z20 0.077 ″ ×0.044 ″45 °TaperMicrostrip Z21 0.077 ″ ×0.587 ″Microstrip Z22 0.241 ″ ×0.587 ″Microstrip Z23 0.460 ″ ×0.119 ″Microstrip Z24 0.414 ″ ×0.044 ″Microstrip Z25 0.223 ″ ×0.044 ″Microstrip Z26 0.998 ″ ×0.044 ″Microstrip Z27 0.279 ″ ×0.075 ″45 °TaperMicrostrip Z28 0.643 ″ ×0.075 ″45 °TaperMicrostrip Z29 0.118 ″ ×0.075 ″Microstrip Z30 1.118 ″ ×0.075 ″Microstrip Z31 0.769 ″ ×0.153 ″Microstrip Z32 0.279 ″ ×0.075 ″45 °TaperMicrostrip Z33 0.643 ″ ×0.075 ″Microstrip Z34 0.094 ″ ×0.075 ″Microstrip Figure5.MRF8VP13350NReferenceCircuitSchematic—915MH z Table11.MRF8VP13350NReferenceCircuitMicrostrips—915 MHz DescriptionMicrostrip Description Microstrip RF INPUT VBIAS RF OUTPUT C2 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z9 Z10 Z11 Z13 Z14 Z15 Z16 C6 Z17 Z18 Z19 Z20 Z12 Z21 Z32 Z33 C18 C19 Z34 C22 C23 Z27 Z22 Z28 C16 C17 Z29 C15 C14 Z30 Z31 C27 VSUPPLY C11 C10 Z23 C13 C12 C21 C20 Z24 C24 Z25 C25 C26 Z26

TYPICALCHARACTERISTICS—915MHzREFERENCECIRCUIT 895 Gps f, FREQUENCY(MHz) Figure6.PowerGain,PowerAddedEfficiencyandOutputPower versusFrequencyataConstantInputPower 18.5 330 360 350 340 PAE, POWERADDED EFFICIENCY(%) PAE Gps, POWERGAIN(dB) 21.5 20.5 905 915 Pout, OUTPUT POWER(WATTS) VDD= 48 Vdc Pin= 3.0 W IDQ(A+B) = 100 mA Pout 19.5 910 900 935 920 925 930 VGS, GATE--SOURCEVOLTAGE(VOLTS) Figure7.OutputPowerversusGate--SourceVoltage 500 0.5 1 1.5 2 400 300

100 Pout, OUTPUT POWER(WATTS)

f = 915 MHz VDD = 48 Vdc, Pin= 3.0 W DetailA f = 915 MHz Detail A VDD = 48 Vdc Pin= 1.5 W Pout, OUTPUT POWER(WATTS) VGS, GATE--SOURCEVOLTAGE(VOLTS) 200 VDD = 48 Vdc, Pin= 1.5 W 20.5 100 42.5 VDD = 48 Vdc Pin= 3.0 W 3 3.5 1.5 Figure8.PowerGain,PowerAddedEfficiencyand InputPowerversusOutputPowerandFrequency Pout, OUTPUT POWER(WATTS) Gps, POWERGAIN(dB) 10 1000 Gps 7.5 2.5 100 Pin Pin, INPUT POWER(WATTS) PAE, POWERADDED EFFICIENCY(%) PAE f = 928 MHz

915 MHz

VDD = 48 Vdc IDQ(A+B) = 100 mA

902 MHz

928 MHz

TYPICALCHARACTERISTICS—915MHzREFERENCECIRCUIT Figure9.PowerGain,PowerAddedEfficiencyand InputPowerversusOutputPowerandTemperature Pout, OUTPUT POWER(WATTS) Gps, POWERGAIN(dB) 16 10 1000 Gps 7.5 2.5 Pin Pin, INPUT POWER(WATTS) PAE, POWERADDED EFFICIENCY(%) 85 /C0095C VDD = 48 Vdc IDQ(A+B) = 100 mA f = 915 MHz TA = 25 /C0095C 125 /C0095C 25 /C0095C 25 /C0095C 85 /C0095C 85 /C0095C 125 /C0095CPAE 100 125 /C0095C

Table12.1300MHzNarrowbandPerformance (1,2)(In NXP Test Fixture, 50 ohm system) VDD= 50 Vdc, IDQ(A+B) = 100 mA, Pout= 350 W Peak (70 W Avg.), f = 1300 MHz, 100 µsec Pulse Width, 20% Duty Cycle Characteristic Symbol Min Typ Max Unit Power Gain Gps 17.5 19.2 20.5 dB Drain Efficiency ηD 55.0 58.0 — % 1. Part internally input matched. 2. Measurementmadewithdeviceinstraightleadconfigurationbeforeanyleadformingoperationisapplied.Leadformingisusedforgullwing (GN) parts.

Figure10.MRF8VP13350NNarrowbandTestCircuitComponent Layout—1300MHz CUTOUTAREA MRF8VP13350N Rev. 2 D59659 C15 C16 C17 C10 C18 C19 C20 C12 C13 C14 C1 R1 C21 C22 C23 C11 C24 C25 C26 Table13.MRF8VP13350NNarrowbandTestCircuitComponentD esignationsandValues—1300MHz Part Description PartNumber Manufacturer C1, C13 10 pF Chip Capacitors ATC800B100JT500XT ATC C2, C3 6.2 pF Chip Capacitors ATC800B6R2BT500XT ATC C4, C5 8.2 pF Chip Capacitors ATC800B8R2CT500XT ATC C6, C7, C10, C11 180 pF Chip Capacitors ATC800B181JT300XT ATC C8, C9 4.7 pF Chip Capacitors ATC800B4R7CT500XT ATC C12 1.0 pF Chip Capacitor ATC800B1R0BT500XT ATC C14 1.7 pF Chip Capacitor ATC800B1R7BT500XT ATC C15, C21 47 µF Tantalum Capacitors 593D476X9016D2TE3 Vishay/Sprague C16, C22 0.1 µF Chip Capacitors C1206C104K1RACTU Kemet C17, C23 0.22 µF Chip Capacitors C1210C224K1RACTU Kemet C18, C24 0.1 µF Chip Capacitors C1206C104K1RACTU Kemet C19, C25 2.2 µF Chip Capacitors 2225X7R225KT3AB ATC C20, C26 330 µF, 63 V Electrolytic Capacitors MCRH63V337M13X21-RH Multicomp R1 100 Ω, 1/4 W Chip Resistor CRCW1206100RFKEA Vishay R2, R3 200 Ω, 1/4 W Chip Resistors CRCW1206200RFKEA Vishay PCB Arlon AD255A, 0.030 ″,εr= 2.55 D59659 MTL

DescriptionMicrostrip DescriptionMicrostrip DescriptionMicrostrip Figure11.MRF8VP13350NNarrowbandTestCircuitSchematic—1300MHz Table14.MRF8VP13350NNarrowbandTestCircuitMicrostrips—1300MHz RF INPUT Z1 DUT Z31 C15 Z23 Z24 VGG VDD C20 Z11 Z16 RF OUTPUT Z42 Z41 C16 C18 C19 C12 C17 Z17 Z33 R1 C2 C4 Z13 Z12 Z10 C3 C5 Z14 Z21 Z19 C21 VGG C22 C23 Z22 Z20 Z18 Z15 Z25 Z27 C10 Z29 Z35 Z37 Z39 C13 Z43 C14 Z44 Z26 VDD C26 C24 C25 Z28 C11 Z30 Z32 Z34 Z36 Z38 Z40 Z33, Z34 0.020 ″ ×0.485 ″Microstrip Z35, Z36 0.030 ″ ×0.485 ″Microstrip Z37, Z38 0.025 ″ ×0.485 ″Microstrip Z39, Z40 1.283 ″ ×0.084 ″Microstrip* Z41 0.313 ″ ×0.083 ″Microstrip Z42 0.075 ″ ×0.083 ″Microstrip Z43 0.619 ″ ×0.083 ″Microstrip Z44 0.065 ″ ×0.083 ″Microstrip Z1 0.410 ″ ×0.083 ″Microstrip Z2 0.233 ″ ×0.083 ″Microstrip Z3, Z5 1.096 ″ ×0.065 ″Microstrip* Z4, Z6 1.061 ″ ×0.065 ″Microstrip* Z7, Z8 0.409 ″ ×0.065 ″Microstrip Z9, Z10 0.519 ″ ×0.065 ″Microstrip Z11, Z12 0.125 ″ ×0.065 ″Microstrip Z13, Z14 0.543 ″ ×0.485 ″Microstrip Z15, Z16 0.075 ″ ×0.485 ″Microstrip Z17, Z18 0.768 ″ ×0.065 ″Microstrip Z19, Z20 0.993 ″ ×0.065 ″Microstrip Z21, Z22 0.534 ″ ×0.065 ″Microstrip Z23, Z24 0.075 ″ ×0.485 ″Microstrip Z25, Z26 0.768 ″ ×0.065 ″Microstrip Z27, Z28 1.088 ″ ×0.065 ″Microstrip Z29, Z30 0.429 ″ ×0.065 ″Microstrip Z31, Z32 0.468 ″ ×0.485 ″Microstrip * Line length include microstrip bends

TYPICALCHARACTERISTICS—1300MHz 10 100 500 VGS, GATE--SOURCEVOLTAGE(VOLTS) Figure12.OutputPowerversusGate--Source VoltageataConstantInputPower Pout, OUTPUT POWER(WATTS) PEAK 300 250 200 150 100 1.5 2 400 350 0.5 1 2.5 Pin, INPUT POWER(dBm) Pout, OUTPUT POWER(dBm) PEAK 44 36 34 32 26 30 28 1300 338 390 f (MHz) P1dB (W) P3dB (W) Figure13.OutputPowerversusInputPower Pout, OUTPUT POWER(WATTS) PEAK Figure14.PowerGainandDrainEfficiency versusOutputPowerandQuiescentCurrent Gps, POWERGAIN(dB) ηD,DRAINEFFICIENCY(%) IDQ(A+B) = 900 mA VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1300MHz Pulse Width = 100 µsec, 20% Duty Cycle 600 mA 10 100 500 Pout, OUTPUT POWER(WATTS) PEAK Figure15.PowerGainandDrainEfficiency versusOutputPower Gps, POWERGAIN(dB) ηD,DRAINEFFICIENCY(%) Pout, OUTPUT POWER(WATTS) PEAK Figure16.PowerGainversusOutputPower andDrain--SourceVoltage

19 Gps, POWERGAIN(dB)

ηD 100 mA VDD= 50 Vdc, f = 1300 MHz Pulse Width = 100 µsec, 20% Duty Cycle Pin= 5 W Pin= 2.5 W 40 42 VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1300 MHz Pulse Width = 100 µsec, 20% Duty Cycle ηD 85 /C0095C Gps 25 /C0095C 85 /C0095C TC = 25 /C0095C --40/C0095C --40/C0095C VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1300MHz Pulse Width = 100 µsec, 20% Duty Cycle IDQ(A+B) = 100 mA, f = 1300 MHz, Pulse Width = 100 µsec 20% Duty Cycle VDD= 30 V 35 V 40 V 50 V 45 V 300 mA 100 mA 600 mA 900 mA 200 250 300 350 Gps

1300MHzNARROWBANDPRODUCTIONTESTFIXTURE f MHz Zsource ΩΩ ΩΩ Zload ΩΩ ΩΩ 1300 5.1 + j3.6 2.1 + j3.9 Zsource= Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration. Figure17.NarrowbandSeriesEquivalentSourceandLoadImpedance—1300MHz Input Matching Network Device Under Test Output Matching Network -- + Zsource Zload 50 Ω50 Ω

Figure18.PCBPadLayoutforOM--780--4L (20.32) 0.800 (4.70) 0.185 (mm) Inches 4X Solder Pads 1. Slot dimensions are minimum dimensions and exclude milling tolerances. (10.39) 0.409 (1) (9.88) 0.389 (1) (20.70) 0.815 (1) (8.89) 0.350 (18.80) 0.740 (8.89) 0.350 (10.41) 0.410 (4.70) 0.185 (mm) Inches Solder pad with thermalviastructure. (8.26) 0.325 Figure19.PCBPadLayoutforOM--780G--4L (12.95) 0.510

PRODUCTDOCUMENTATION,SOFTWAREANDTOOLS Refer to the following resources to aid your design process. ApplicationNotes

• AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers EngineeringBulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
• Electromigration MTTF Calculator
• RF High Power Model
• .s2p File DevelopmentTools
• Printed Circuit Boards ToDownloadResourcesSpecifictoaGivenPartNumber: 1.Go to http://www .nxp.com/RF 2.Search by part number 3.Click part number link 4.Choose the desired resource from the drop down menu REVISIONHISTORY The following table summarizes revisions to this document. Revision Date Description

0 May 2015 • Initial Release of Data Sheet

1 Oct. 2015 • Table 2, Thermal Characteristics: added thermal resistance data for the 915 MHz reference circuit, p. 2 2 Feb. 2017 • Table 10, MRF8VP13350N Reference Circuit Component Designations and Values — 915 MHz: updated Q1 to correct part number, p. 6

• Fig. 11, Narrowband Test Circuit Schematic — 1300 MHz: corrected C6, C7, C10 and C11 bias line chip capacitor connection, p. 12

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