MRF8S8260H FREESCALE | Alldatasheet

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Technical content

Features

 100% PAR Tested for Guaranteed Output Power Capability  Characterized with Series Equivalent Large- -Signal Impedance Parameters and Common Source S- -Parameters  Internally Matched for Ease of Use  Integrated ESD Protection  Greater Negative Gate- -Source VoltageRange for Improved Class C Operation  Designed for Digital Predistortion Error Correction Systems  Optimized for Doherty Applications  In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 16. Table 1. Maximum Ratings Table 2. Thermal Characteristics

  1. Exceeds recommended operating conditions. SeeCW operation data in Maximum Ratings table.
  2. Continuous use at maximum temperature will affect MTTF.
  3. MTTF calculator available at http://www.freescale.com/rf

Select Documentation/Application Notes - - AN1955.  Freescale Semiconductor, Inc., 2011- -2012.All rights reserved.

Freescale Semiconductor, Inc. Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted) Channel Bandwidth @5M H zO f f s e t . Channel Bandwidth @5M H zO f f s e t .

  1. Part internally matched both on input and output.

Freescale Semiconductor, Inc. Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued)

  1. Exceeds recommended operating conditions. SeeCW operation data in Maximum Ratings table.

Freescale Semiconductor, Inc. Figure 1. MRF8S8260HR3(HSR3) Test Circuit Component Layout *C1 and C20 are mounted vertically. Table 5. MRF8S8260HR3(HSR3) Test Circuit Component Designations and Values

Freescale Semiconductor, Inc. Pout, OUTPUT POWER (WATTS) AVG. Figure 5. Single- -Carrier W- -CDMA Power Gain, Drain Figure 6. Broadband Frequency Response

895 MHz

3.84 MHz Channel Bandwidth

850 MHz 875 MHz

850 MHz

875 MHz

Figure 7. CCDF W- -CDMA IQ Magnitude Channel Bandwidth @5M H zO f f s e t .

3.84 MHz

Figure 8. Single- -Carrier W- -CDMA Spectrum

Freescale Semiconductor, Inc. Figure 9. Series Equivalent Source and Load Impedance

Freescale Semiconductor, Inc.

880 MHz

865 MHz

851 MHz

Figure 10. Pulsed CW Output Power

MRF8S8260HR3 MRF8S8260HSR3 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS

Freescale Semiconductor, Inc. MRF8S8260HR3 MRF8S8260HSR3

MRF8S8260HR3 MRF8S8260HSR3 RF Device Data Freescale Semiconductor, Inc.

Freescale Semiconductor, Inc. MRF8S8260HR3 MRF8S8260HSR3

MRF8S8260HR3 MRF8S8260HSR3 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents, tools and software to aid your design process. Application Notes  AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins  EB212: Using Data Sheet Impedances for RF LDMOS Devices Software  Electromigration MTTF Calculator  RF High Power Model  .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8S8260H and MRF8S8260HS parts will be available for 2 years after release of MRF8S8260H and MRF8S8260HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8S8260H and MRF8S8260HS in the R3 tape and reel option.

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 0 Jan. 2011  Initial Release of Data Sheet 1 Feb. 2012  Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to beused as a guideline when handling ESD sensitive devices, p. 2.  Replaced Case Outline 465B- -03, Issue D, with 465B- -04, Issue F, p. 1, 9- -10. Deleted Style 1 pin note on  Replaced Case Outline 465C- -02, Issue D, with 465C- -03, Issue E, p. 1, 11- -12. Deleted Style 1 pin note on 13.08- -13.34.

Freescale Semiconductor, Inc. MRF8S8260HR3 MRF8S8260HSR3 Information in this document is provided solely to enablesystem and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its productsfor any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributorsharmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners.  Freescale Semiconductor, Inc. 2011- -2012. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516

2100 East Elliot Road

Tempe, Arizona 85284 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7

81829 Muenchen, Germany

+44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) + 3 316 93 54 84 8( F r e n c h ) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1- -8- -1, Shimo- -Meguro, Meguro- -ku, Tokyo 153- -0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center LDCForFreescaleSemiconductor@hibbertgroup.com Document Number: MRF8S8260H Rev. 1, 2/2012