MRF8P23080HR3 FREESCALE | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 15
Technical content
Features
- Production Tested in a Symmetrical Doherty Configuration
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Large- -Signal Load- -Pull Parameters and Common Source S- -Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate- -Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- RoHS Compliant
- NI- -780- -4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
- NI- -780S- -4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel.
Table 1. Maximum Ratings
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
Figure 1. Pin Connections
42 RFoutB/VDSB
© Freescale Semiconductor, Inc., 2010.All rights reserved.
Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5°C unless otherwise noted) on 3.84 MHz Channel Bandwidth @±5M H zO f f s e t . measured in 3.84 MHz Channel Bandwidth @±5M H zO f f s e t .
- MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
Documentation/Application Notes - - AN1955.
- Exceeds recommended operating conditions. SeeCW operation data in Maximum Ratings table.
- Each side of device measured separately.
- Part internally matched both on input and output.
- Measurement made with device in a Symmetrical Doherty configuration (continued)
Table 4. Electrical Characteristics(TA =2 5°C unless otherwise noted)(continued)
- Measurement made with device in a Symmetrical Doherty configuration.
- Exceeds recommended operating conditions. SeeCW operation data in Maximum Ratings table.
Figure 2. MRF8P23080HR3(HSR3) Test Circuit Component Layout Table 5. MRF8P23080HR3(HSR3) Test Circuit Component Designations and Values
MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor λ λ λ λ λ λ Single- -ended Quadrature combined Doherty Push- -pull λ λ 4 λ λ Figure 3.Possible Circuit Topologies
Figure 4. Output Peak- -to- -Average Ratio Compression (PARC) Broadband Performance @ Pout = 16 Watts Avg. Figure 5. Intermodulation Distortion Products Figure 6. Output Peak- -to- -Average Ratio
3.84 MHz Channel Bandwidth, Input Signal
Pout, OUTPUT POWER (WATTS) AVG. Figure 7. Single- -Carrier W- -CDMA Power Gain, Drain Figure 8. Broadband Frequency Response
2300 MHz
2350 MHz
2400 MHz
Figure 9. CCDF W- -CDMA IQ Magnitude Channel Bandwidth @±5M H zO f f s e t .
3.84 MHz
Figure 10. Single- -Carrier W- -CDMA Spectrum
2300 MHz2400 MHz
Figure 11. Pulsed CW Output Power NOTE: Measurement made on the Class AB, carrier side of the device.
MRF8P23080HR3 MRF8P23080HSR3 PACKAGE DIMENSIONS
MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3
MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor
MRF8P23080HR3 MRF8P23080HSR3 PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins
- EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
- Electromigration MTTF Calculator
- RF High Power Model
- .s2p File For Software, do a Part Number search at http://www.freescale.com, and select the Part Number link. Go to the Software & Tools tab on the parts Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description
0 May 2010 • Initial Release of Data Sheet
1 Nov. 2010 • Updated frequency in overview paragraph from 2300 to 2400 MHz to 2300 to 2620 MHz to show the broadband performance of the part, p. 1
- In Table 2, Thermal Characteristics, Pout = 16 W CW thermal resistance value changed from 0.91 to 0.89_C/W and Pout = 80 W CW thermal resistance value changed from 0.91 to 0.55_C/W. Thermal values now reflect the use of thecombined dissipated power from the carrier amplifier and peaking amplifier, p. 2.
- Broadband IRL data removed from Fig. 4, Output Peak- -to- -Average Ratio Compression (PARC) Broadband Performance and Fig. 8, Broadband Frequency Response graphs. Data not valid indicator of product performance due to circuit implementation, p. 6, 7.
MRF8P23080HR3 MRF8P23080HSR3 RF Device Data Freescale Semiconductor Information in this document is provided solely to enablesystem and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its productsfor any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customers technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributorsharmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) + 3 316 93 54 84 8( F r e n c h ) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1- -8- -1, Shimo- -Meguro, Meguro- -ku, Tokyo 153- -0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor China Ltd. Exchange Building 23F No. 118 Jianguo Road Chaoyang District Beijing 100022 China +86 10 5879 8000 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center LDCForFreescaleSemiconductor@hibbertgroup.com Document Number: MRF8P23080H Rev. 1, 11/2010