MRF8P20140WHR3 FREESCALE | Alldatasheet

Document overview

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Technical content

Features

  • Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃ 240 MHz.
  • Designed for Wideband Applications that Require 160 MHz Signal Bandwidth
  • Production Tested in a Symmetrical Doherty Configuration
  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Large- -Signal Load- -Pull Parameters and Common Source S- -Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate- -Source VoltageRange for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • NI- -780- -4 in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 14.
  • NI- -780S- -4 in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 14.

Table 1. Maximum Ratings

  1. Exceeds recommended operating conditions. SeeCW operation data in Maximum Ratings table.
  2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W- -CDMA single- -carrier input signal where

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

  1. Continuous use at maximum temperature will affect MTTF.

Figure 1. Pin Connections

42 RFoutB/VDSB

© Freescale Semiconductor, Inc., 2011.All rights reserved.

Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5°C unless otherwise noted) Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @±5M H zO f f s e t . measured in 3.84 MHz Channel Bandwidth @±5M H zO f f s e t . Select Documentation/Application Notes - - AN1955.

  1. Exceeds recommended operating conditions. SeeCW operation data in Maximum Ratings table.
  2. Each side of device measured separately.

DDA and VDDB must be tied together and powered by a single DC power supply.

  1. VGG =2 . 0xVGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
  2. Part internally matched both on input and output.
  3. Measurement made with device in a Symmetrical Doherty configuration. (continued)

Table 4. Electrical Characteristics(TA =2 5°C unless otherwise noted)(continued)

  1. Measurement made with device in a Symmetrical Doherty configuration.
  2. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W- -CDMA single- -carrier input signal where

output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

  1. Exceeds recommended operating conditions. SeeCW operation data in Maximum Ratings table.

Figure 2. MRF8P20140WHR3(WHSR3) Test Circuit Component Layout Note 1: * denotes that C2, C3, C12 and C13 are mounted vertically. Note 2: VDDA and VDDB must be tied together and powered by a single DC power supply. Table 5. MRF8P20140WHR3(WHSR3) Test Circuit Component Designations and Values

MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor λ λ λ λ λ λ Single- -ended Quadrature combined Doherty Push- -pull λ λ 4 λ λ Figure 3.Possible Circuit Topologies

Figure 7. Output Peak- -to- -Average Ratio Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Single- -Carrier W- -CDMA Power Gain, Drain

3.84 MHz Channel Bandwidth, Input Signal

1880 MHz

Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Broadband Frequency Response

2025 MHz

1920 MHz

1920 MHz2025 MHz

Figure 11. CCDF W- -CDMA IQ Magnitude Channel Bandwidth @±5M H zO f f s e t . Figure 12. 2-Carrier W-CDMA Spectrum

3.84 MHz

3.84 MHz BW

Figure 13. CCDF W- -CDMA IQ Magnitude Channel Bandwidth @±5M H zO f f s e t . Figure 14. Single- -Carrier W- -CDMA Spectrum

MRF8P20140WHR3 MRF8P20140WHSR3 PACKAGE DIMENSIONS

MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor

MRF8P20140WHR3 MRF8P20140WHSR3

MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor

MRF8P20140WHR3 MRF8P20140WHSR3 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, Software and Tools to aid your design process. Application Notes

  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
  • .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF8P20140WH and MRF8P20140WHS parts will be available for 2 years after release of MRF8P20140WH and MRF8P20140WHS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF8P20140WHand MRF8P20140WHS in the R3 tape and reel option.

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 0 Apr. 2011 • Initial Release of Data Sheet

MRF8P20140WHR3 MRF8P20140WHSR3 RF Device Data Freescale Semiconductor Information in this document is provided solely to enablesystem and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its productsfor any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributorsharmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2011. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516

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