MRF8P20140WH NXP | Alldatasheet
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Designed for Wide Instantaneous Bandwidth Applications. VBWres ≃ 240 MHz. Designed for Wideband Applications that Require 160 MHz Signal Bandwidth Production Tested in a Symmetrical Doherty Configuration 100% PAR Tested for Guaranteed Output Power Capability Characterized with Large- -Signal Load- -Pull Parameters and Common Source S- -Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate- -Source Voltage Range for Improved Class C Operation Designed for Digital Predistortion Error Correction Systems NI- -780H- -4L in Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13- -inch Reel. NI- -780S- -4L, NI- -780GS- -4L in Tape and Reel. R3 Suffix = 250 Units, 32 mm Tape Width, 13- -inch Reel. 1. P3dB = Pavg + 7.0 dB where Pavg is the average output power measured using an unclipped W- -CDMA single- -carrier input signal where output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF. Document Number: MRF8P20140WH Rev. 1, 11/2013 Freescale Semiconductor Technical Data 1880- -2025 MHz, 24 W AVG., 28 V SINGLE W- -CDMA LATERAL N- -CHANNEL RF POWER MOSFETs MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 NI- -780S- -4L MRF8P20140WHSR3 NI- -780H- -4L MRF8P20140WHR3 (Top View) RFoutA/VDSA31 Figure 1. Pin Connections
42 RFoutB/VDSB
Freescale Semiconductor, Inc., 2011, 2013.All rights reserved.
Freescale Semiconductor, Inc. Table 1. Maximum Ratings Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
Select Documentation/Application Notes - - AN1955.
- Exceeds recommended operating conditions. SeeCW operation data in Maximum Ratings table.
- Each side of device measured separately.
DDA and VDDB must be tied together and powered by a single DC power supply.
- VGG =2 . 0xVGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
Freescale Semiconductor, Inc. Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued) Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @5M H zO f f s e t . measured in 3.84 MHz Channel Bandwidth @5M H zO f f s e t .
- VDDA and VDDB must be tied together and powered by a single DC power supply.
- Part internally matched both on input and output.
- Measurement made with device in a Symmetrical Doherty configuration.
- Measurement made with device in straight leadconfiguration before any lead forming operation is applied. Lead forming is used for gull
output PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.
Freescale Semiconductor, Inc. Figure 2. MRF8P20140WHR3(WHSR3) Test Circuit Component Layout Note 1: * denotes that C2, C3, C12 and C13 are mounted vertically. Note 2: VDDA and VDDB must be tied together and powered by a single DC power supply. Table 5. MRF8P20140WHR3(WHSR3) Test Circuit Component Designations and Values
Freescale Semiconductor, Inc. Figure 3. Possible Circuit Topologies
Freescale Semiconductor, Inc. Figure 7. Output Peak- -to- -Average Ratio Pout, OUTPUT POWER (WATTS) AVG. Figure 8. Single- -Carrier W- -CDMA Power Gain, Drain
3.84 MHz Channel Bandwidth, Input Signal
1880 MHz
Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Broadband Frequency Response
2025 MHz
1920 MHz
1920 MHz2025 MHz
Freescale Semiconductor, Inc. Figure 11. CCDF W- -CDMA IQ Magnitude Channel Bandwidth @5M H zO f f s e t . Figure 12. 2--Carrier W--CDMA Spectrum
3.84 MHz
3.84 MHz BW
Figure 13. CCDF W- -CDMA IQ Magnitude Channel Bandwidth @5M H zO f f s e t . Figure 14. Single- -Carrier W- -CDMA Spectrum
Freescale Semiconductor, Inc. MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 PACKAGE DIMENSIONS
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 RF Device Data Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc. MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 RF Device Data Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc. MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 RF Device Data Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc. MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS Refer to the following documents, Software and Tools to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model .s2p File For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 0 Apr. 2011 Initial Release of Data Sheet 1 Nov. 2013 Added part number MRF8P20140WGHSR3 (NI- -780GS- -4L), p. 1 Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 2 Added NI- -780GS- -4L package isometric, p. 1, and Mechanical Outline, pp. 14- -15 Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 16
MRF8P20140WHR3 MRF8P20140WHSR3 MRF8P20140WGHSR3 RF Device Data Freescale Semiconductor, Inc. Information in this document is provided solely to enablesystem and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particularpurpose, nor does Freescale assume any liability arising outof the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., respective owners. E 2013 Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Document Number: MRF8P20140WH Rev. 1, 11/2013