MRF8372 ADPOW | Alldatasheet
Document overview
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- PDF pages: 3
Technical content
Features
- Specified @ 12.5V, 870 MHz characteristics
- Output Power = 750 mW
- Minimum Gain = 8.0dB
- Efficiency 60% Typical
- Cost Effective SO-8 package RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website atWWW.ADVANCEDPOWER.COM or contact our factory direct. MRF8372, R1, R2 MRF8372G, R1, R2 Rev A 9/2005 ELECTRICAL SPECIFICATIONS (Tcase = 25 °C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCEO IC = 5.0 mA, I B = 0 16 - - V BVCES Ic = 5.0 mA, VBE = 0 30 - - V BVEBO IE = 0.1 mA, I C = 0 3.0 - - V ICES VCE = 15 V, VBE = 0 V - - 0.1 mA HFE VCE = 5.0 v, Ic = 50 mA 30 - 200 - FUNCTIONAL Symbol Test Conditions Value Min. Typ. Max. Unit GPE f = 870 MHz, POUT = 0.75W, V CE = 12.5V 8.0 9.5 - dB η c f = 870MHz, POUT = 0.75W, V CE = 12.5V 50 60 - % COB VCB = 15 V, f = 1.0 MHz - - 2.75 pf
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website atWWW.ADVANCEDPOWER.COM or contact our factory direct. MRF8372, R1, R2 MRF8372G, R1, R2 Rev A 9/2005 PACKAGE MECHANICAL DATA 1. 4. 8. 5. PIN 1. EMITTER 2. COLLECTOR 3. COLLECTOR 4. EMITTER 5. EMITTER 6. BASE 7. BASE 8. EMITTER