MRF7S35120HSR3 FREESCALE | Alldatasheet

Document overview

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Technical content

Features

  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Qualified Up to a Maximum of 32 VDD Operation
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings Table 2. Thermal Characteristics

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access MTTF

Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved.

Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

  1. Part internally matched both on input and output.

Figure 1. MRF7S35120HSR3 Test Circuit Schematic Table 5. MRF7S35120HSR3 Test Circuit Component Designations and Values C1 470 μF, 63 V Electrolytic Capacitor 477KXM063M Illinois Cap. C2 47 μF, 50 V Electrolytic Capacitor 476KXM050M Illinois Cap.

Figure 2. MRF7S35120HSR3 Test Circuit Component Layout

Figure 3. Capacitance versus Drain-Source Voltage Figure 4. DC Safe Operating Area Figure 5. Pulsed Power Gain and Drain Efficiency Figure 6. Pulsed Output Power versus Figure 7. Pulsed Power Gain versus Figure 8. Pulsed Power Gain versus

3300 MHz

3100 MHz

Figure 9. Pulsed Output Power versus Figure 10. Pulsed Power Gain and Drain Efficiency

3100 MHz −30/C0095C

3300 MHz −30/C0095C

3100 MHz 25/C0095C

3500 MHz −30/C0095C

3300 MHz 25/C0095C

3500 MHz 25/C0095C

3100 MHz 85/C0095C

3300 MHz 85/C0095C

3500 MHz 85/C0095C 9

Figure 11. Pulsed Power Gain and Drain Efficiency Figure 12. Pulsed Power Gain and Drain Efficiency

Figure 13. Pulsed Power Gain, Drain Efficiency Figure 14. Single-Channel OFDM Relative Constellation Error, Figure 15. MTTF versus Junction Temperature Duty Cycle = 20%, and ηD = 40%.

4 Bursts, 7 MHz Channel Bandwidth, Input Signal

Figure 16. Series Equivalent Source and Load Impedance

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.805 0.815 20.45 20.70 B 0.380 0.390 9.65 9.91 C 0.125 0.170 3.18 4.32 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.774 0.786 19.61 20.02 R 0.365 0.375 9.27 9.53 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE D K C E H F U (FLANGE) Z (LID) bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF aaa 0.005 REF 0.127 REF S 0.365 0.375 9.27 9.52 N 0.772 0.788 19.61 20.02 MAMbbb B MT B B (FLANGE) SEATING PLANE MAMccc B MT MAMbbb B MT A A (FLANGE) T N (LID) M (INSULATOR) MAMccc B MT MAMaaa B MT R (LID) S (INSULATOR) CASE 465A-06 ISSUE H NI-780S

Refer to the following documents to aid your design process. Application Notes

  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description

0 May 2008 • Initial Release of Data Sheet

1 June 2008 • Corrected Pout error and changed from 42.5 Watts to 18 Watts, Typical WiMAX Performance bullet, p. 1

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