MRF7S21170HR3_12 FREESCALE | Alldatasheet
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Features
100% PAR Tested for Guaranteed Output Power Capability Characterized with Series Equivalent Large- -Signal Impedance Parameters Internally Matched for Ease of Use Integrated ESD Protection Greater Negative Gate- -Source Voltage Range for Improved Class C Operation Optimized for Doherty Applications In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. Table 1. Maximum Ratings Table 2. Thermal Characteristics
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available at http://www.freescale.com/rf
Select Documentation/Application Notes - - AN1955. Freescale Semiconductor, Inc., 2006- -2008, 2011- -2012.All rights reserved.
Freescale Semiconductor, Inc. Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted) Channel Bandwidth @5M H zO f f s e t .
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
Freescale Semiconductor, Inc. Table 4. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued)
- VGG =2xV GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
- Part internally matched both on input and output.
Freescale Semiconductor, Inc. Figure 1. MRF7S21170HR3(HSR3) Test Circuit Schematic Table 5. MRF7S21170HR3(HSR3) Test Circuit Component Designations and Values
Freescale Semiconductor, Inc. Figure 2. MRF7S21170HR3(HSR3) Test Circuit Component Layout
Freescale Semiconductor, Inc. Figure 12. Power Gain versus Output Power Figure 13. CCDF W- -CDMA IQ Magnitude Channel Bandwidth @5M H zO f f s e t .
3.84 MHz
Figure 14. Single- -Carrier W- -CDMA Spectrum
Freescale Semiconductor, Inc. Figure 15. Series Equivalent Source and Load Impedance
MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor, Inc. PACKAGE DIMENSIONS
Freescale Semiconductor, Inc. MRF7S21170HR3 MRF7S21170HSR3
MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor, Inc.
Freescale Semiconductor, Inc. MRF7S21170HR3 MRF7S21170HSR3
MRF7S21170HR3 MRF7S21170HSR3 RF Device Data Freescale Semiconductor, Inc. PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description
0 May 2006 Initial Release of Data Sheet
1 June 2006 Added Class C to description of parts, pg. 1 Changeded “” to “- -” in the Device Output Signal Par bullet, pg. 1 Changed typ value from9 to 18 in Part- -to- -Part Phase Variation characteristic description in Table 4, Typical Performances, p. 2 Expanded the characterization range in the MTTF Factor graph from 200_C to 230_C, Fig. 12, p. 7 2 Aug. 2006 Added Greater Negative Source bullet to Features section, p. 1 Corrected Fig. 14, Single- -Carrier W- -CDMA Spectrum, to 3.84 MHz, p. 7 3 Sept. 2006 Changed “Capable of Handling” bullet from 10:1 VSWR @ 28 Vdc to 5:1 VSWR @ 32 Vdc, pg. 1 Added “Insertion” to Part- -to- -Part Phase Variation characteristic description in Table 4, Typical Performances, p. 2 Added Gain Flatness, Group Delay and Deviation from Linear Phase characteristics to Table 4, Typical Performances, p. 2 Corrected Z6 value from “0.119” to “0.156”, corrected Z8 value from “0.156” to “0.119”, corrected Z9 value Added Part Number and Manufacturer for R1, R2 and R3 in Table 5, Test Circuit Component Designations and Values, p. 3 Added Figure 10, Digital Predistortion Correction, p. 6 Corrected Fig. 15, Single- -Carrier W- -CDMA Spectrum, to correctly reflect integrated bandwidth offsets, p. 7 Added Figure 17, Pulsed CW Output Power versus Input Power @ 28 Vdc, p. 9 Added Figure 18, Pulsed CW Output Power versus Input Power @ 32 Vdc, p. 9 4 May 2007 Removed “Designed for Digital Predistortion Error Correction Systems” bullet as functionality is standard, p. 1 Added “Optimized for Doherty Applications” bullet to Features section, p. 1 Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related “Continuous use at maximum temperature will affect MTTF” footnote added, p. 1 Removed footnote and “Measured in Functional Test” from the RF test condition voltage callout for VGS(Q), and added Fixture Gate Quiescent Voltage, VGG(Q) to On Characteristics table, p. 2 Updated verbiage in Typical Performances table, p. 3 Updated Part Numbers in Table 5, Component Designations and Values, to RoHS compliant part numbers and updated obsoleted ATC600 series capacitors to ATC100 series, p. 4 Adjusted scale for Fig. 8, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic range, p. 7 Replaced Fig. 13, MTTF versus Junction Temperature with updated graph. Removed Amps 2 and listed operating characteristics and locationof MTTF calculator for device, p. 8 Fig. 14, CCDF W- -CDMA 3GPP, Test Model 1, 64 DPCH, 50%Clipping, Single- -Carrier Test Signal, updated to include output power level at functional test, p. 8 (continued)
Freescale Semiconductor, Inc. MRF7S21170HR3 MRF7S21170HSR3 REVISION HISTORY (continued) Revision Date Description 5 Apr. 2008 Corrected On Characteristics table ID value for VGS(th) from 270Adc to 372Adc and VDS(on) from 2.7 Adc to 3.72 Adc; tightened VGS(th) minimum and maximum values to match production test values, p. 2 Updated Part Numbers in Table 5, Component Designations and Values, to latest RoHS compliant part numbers, p. 4 Updated Fig. 14, CCDF W- -CDMA 3GPP, Test Model 1,64 DPCH, 50% Clipping, Single- -Carrier Test Signal, to better representproduction test signal, p. 8 6 Mar. 2011 Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13628, p. 1, 2 Fig. 13, MTTF versus Junction Temperature removed, p. 8. Refer to the device’s MTTF Calculator available at freescale.com/RFpower. Go to Design Resources > Software and Tools. Fig. 14, CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal and Fig. 15, Single- -Carrier W- -CDMA Spectrum updated to show the undistorted input test signal, p. 8 (renumbered as Figs. 13 and 14 respectively after Fig. 13 removed) Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 15 7 Feb. 2012 Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to beused as a guideline when handling ESD sensitive devices, p. 2. Replaced Case Outline 465B- -03, Issue D, with 465B- -04, Issue F, p. 1, 11- -12. Deleted Style 1 pin note on Replaced Case Outline 465C- -02, Issue D, with 465C- -03, Issue E, p. 1, 13- -14. Deleted Style 1 pin note on 13.08- -13.34.
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