MRF7S18170H NXP | Alldatasheet

Document overview

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  • PDF pages: 18

Technical content

Features

  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large- -Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate- -Source Voltage Range for Improved Class C Operation
  • Designed for Digital Predistortion Error Correction Systems
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel. For R5 Tape and Reel option, see p. 17.

Table 1. Maximum Ratings Table 2. Thermal Characteristics

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product. Select Documentation/Application Notes - - AN1955. © Freescale Semiconductor, Inc., 2006, 2008, 2011.All rights reserved.

Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics(TA =2 5°C unless otherwise noted) Bandwidth @±5M H zO f f s e t .

  1. VGG =2xV GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
  2. Part internally matched both on input and output.

Table 4. Electrical Characteristics(TA =2 5°C unless otherwise noted)(continued)

Figure 1. MRF7S18170HR3 Test Circuit Schematic — NI- -880 Table 5. MRF7S18170HR3 Test Circuit Component Designations and Values — NI- -880

Figure 2. MRF7S18170HR3 Test Circuit Component Layout — NI- -880

Figure 3. MRF7S18170HSR3 Test Circuit Schematic — NI- -880S Table 6. MRF7S18170HSR3 Test Circuit Component Designations and Values — NI- -880S

Figure 4. MRF7S18170HSR3 Test Circuit Component Layout — NI- -880S

Figure 5. Output Peak- -to- -Average Ratio Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg. Figure 6. Output Peak- -to- -Average Ratio Compression (PARC) Broadband Performance @ Pout = 80 Watts Avg. Figure 7. Two- -Tone Power Gain versus Figure 8. Third Order Intermodulation Distortion

3.84 MHz Channel Bandwidth

Figure 14. Power Gain versus Output Power Figure 15. CCDF W- -CDMA IQ Magnitude Channel Bandwidth @±5M H zO f f s e t .

3.84 MHz

Figure 16. Single- -Carrier W- -CDMA Spectrum

Figure 17. Series Equivalent Source and Load Impedance

MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS

MRF7S18170HR3 MRF7S18170HSR3

MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor

MRF7S18170HR3 MRF7S18170HSR3

MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION AND SOFTWARE Refer to the following documents and software to aid your design process. Application Notes

  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
  • Electromigration MTTF Calculator
  • RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. R5 TAPE AND REEL OPTION R5 Suffix = 50 Units, 56 mm Tape Width, 13 inch Reel. The R5 tape and reel option for MRF7S18170H and MRF7S18170HS parts will be available for 2 years after release of MRF7S18170H and MRF7S18170HS. Freescale Semiconductor, Inc. reserves the right to limit the quantities that will be delivered in the R5 tape and reel option. At the end of the 2 year period customers who have purchased these devices in the R5 tape and reel option will be offered MRF7S18170Hand MRF7S18170HS in the R3 tape and reel option.

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 0 Oct. 2006 • Initial Release of Data Sheet 1 Dec. 2008 • Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2

  • Updated Typical Performance table to provide betterdefinition of characterization attributes, p. 3
  • Corrected Z7 from 1.110″ to 0.120″ in Z list, Fig. 1, Test Circuit Schematic – NI- -880, p. 4
  • Updated Part Numbers in Tables 5, 6, Component Designations and Values, to latest RoHS compliant part numbers, p. 4, 6
  • Corrected Z7 from 1.110″ to 0.117″ in Z list, Fig. 3, Test Circuit Schematic – NI- -880S, p. 6
  • Adjusted scale for Fig. 10, Intermodulation Distortion Products versus Tone Spacing, to show wider dynamic range, p. 9
  • Replaced Fig. 15, MTTF versus Junction Temperature, with updated graph; removed Amps2 and listed operating characteristics and locationof MTTF calculator for device, p. 10
  • Updated Fig. 16, CCDF W- -CDMA 3GPP, Test Model 1,64 PDCH, 50% Clipping, Single- -Carrier Test Signal, to show input signal only, p. 10 2 Mar. 2011 • Modified data sheet to reflect RF Test Reduction described in Product and Process Change Notification number, PCN13628, p. 1, 2
  • Fig. 15, MTTF versus Junction Temperature removed, p. 10. Refer to the device’s MTTF Calculator available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
  • Fig. 16, CCDF W- -CDMA IQ Magnitude Clipping, Single- -Carrier Test Signal and Fig. 17, Single- -Carrier W- -CDMA Spectrum updated to show the undistorted input test signal, p. 10 (renumbered as Figs. 15 and 16 respectively after Fig. 15 removed)
  • Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 17

MRF7S18170HR3 MRF7S18170HSR3 Information in this document is provided solely to enablesystem and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its productsfor any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components insystems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributorsharmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006, 2008, 2011. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516

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