MRF7S18170H FREESCALE | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 15
Technical content
Features
- 100% PAR Tested for Guaranteed Output Power Capability
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Internally Matched for Ease of Use
- Integrated ESD Protection
- Greater Negative Gate-Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings Table 2. Thermal Characteristics
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access the MTTF
Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) 1877.5 MHz, Single-Carrier W-CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
- V GG = 2 x V GS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
- Part internally matched both on input and output.
Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)
Figure 1. MRF7S18170HR3 Test Circuit Schematic NI-880 Table 5. MRF7S18170HR3 Test Circuit Component Designations and Values NI-880
Figure 2. MRF7S18170HR3 Test Circuit Component Layout NI-880
Figure 3. MRF7S18170HSR3 Test Circuit Schematic NI-880S Table 6. MRF7S18170HSR3 Test Circuit Component Designations and Values NI-880S
Figure 4. MRF7S18170HSR3 Test Circuit Component Layout NI-880S
Figure 5. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg. Figure 6. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ Pout = 80 Watts Avg. Figure 7. Two-Tone Power Gain versus Figure 8. Third Order Intermodulation Distortion
3.84 MHz Channel Bandwidth
MTTF factor by ID2 for MTTF in a particular application. Figure 14. Power Gain versus Output Power Figure 15. MTTF Factor versus Junction Temperature Figure 16. CCDF W-CDMA 3GPP , Test Model 1,
64 DPCH, 50% Clipping, Single-Carrier Test Signal
Channel Bandwidth @ ±5 MHz Offset.
3.84 MHz
Figure 17. Single-Carrier W-CDMA Spectrum
Figure 18. Series Equivalent Source and Load Impedance
MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS CASE 465B-03 ISSUE D NI-880 MRF7S18170HR3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 1.335 1.345 33.91 34.16 B 0.535 0.545 13.6 13.8 C 0.147 0.200 3.73 5.08 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 G 1.100 BSC 27.94 BSC H 0.057 0.067 1.45 1.70 K 0.175 0.205 4.44 5.21 N 0.871 0.889 19.30 22.60 Q .118 .138 3.00 3.51 R 0.515 0.525 13.10 13.30 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE D G K C E H F Q2X MAMbbb B MT MAMbbb B MT B B (FLANGE) SEATING PLANE MAMccc B MT MAMbbb B MT AA (FLANGE) T N (LID) M (INSULATOR) S MAMaaa B MT (INSULATOR) R MAMccc B MT (LID) S 0.515 0.525 13.10 13.30 M 0.872 0.888 22.15 22.55 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF NI-880S MRF7S18170HSR3 CASE 465C-02 ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.905 0.915 22.99 23.24 B 0.535 0.545 13.60 13.80 C 0.147 0.200 3.73 5.08 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE D K C E H F MAMbbb B MT B B (FLANGE) MAMccc B MT MAMbbb B MT AA (FLANGE) T N (LID) M (INSULATOR) MAMccc B MT MAMaaa B MT R (LID) S (INSULATOR) S 0.515 0.525 13.10 13.30 M 0.872 0.888 22.15 22.55 bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF aaa 0.007 REF 0.178 REF
MRF7S18170HR3 MRF7S18170HSR3 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins
- EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 0 Oct. 2006 • Initial Release of Data Sheet
MRF7S18170HR3 MRF7S18170HSR3 RF Device Data Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customers technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale/C0116 and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2006. All rights reserved. How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516
2100 East Elliot Road
Tempe, Arizona 85284 +1-800-521-6274 or +1-480-768-2130 www.freescale.com/support Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7
81829 Muenchen, Germany
+44 1296 380 456 (English) +46 8 52200080 (English) +49 89 92103 559 (German) +33 1 69 35 48 48 (French) www.freescale.com/support Japan: Freescale Semiconductor Japan Ltd. Headquarters ARCO Tower 15F 1-8-1, Shimo-Meguro, Meguro-ku, Tokyo 153-0064 Japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com Asia/Pacific: Freescale Semiconductor Hong Kong Ltd. Technical Information Center
2 Dai King Street
Tai Po, N.T., Hong Kong +800 2666 8080 support.asia@freescale.com For Literature Requests Only: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-441-2447 or 303-675-2140 Fax: 303-675-2150 LDCForFreescaleSemiconductor@hibbertgroup.com Document Number: MRF7S18170H Rev. 0, 10/2006