MRF6S23100H FREESCALE | Alldatasheet
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MRF6S23100HR3 MRF6S23100HSR3 RF Device Data Freescale Semiconductor RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion systems.
- Typical 2-Carrier W-CDMA Performance: V DD = 28 Volts, IDQ = 1000 mA, Pout = 20 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain 15.4 dB Drain Efficiency 23.5% IM3 @ 10 MHz Offset -37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -40.5 dBc @ 3.84 MHz Channel Bandwidth
- Capable of Handling 10:1 VSWR, @ 28 Vdc, 2390 MHz, 100 Watts CW Output Power
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- Lower Thermal Resistance Package
- Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
- Low Gold Plating Thickness on Leads, 40µ″ Nominal.
- Pb-Free and RoHS Compliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings Table 2. Thermal Characteristics
- MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product. Select Documentation/Application Notes - AN1955. packaging MOS devices should be observed. Freescale Semiconductor, Inc., 2005. All rights reserved.
Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
- Part is internally matched both on input and output.
Figure 1. MRF6S23100HR3(HSR3) Test Circuit Schematic Table 5. MRF6S23100HR3(HSR3) Test Circuit Component Designations and Values
Figure 2. MRF6S23100HR3(HSR3) Test Circuit Component Layout
Figure 3. 2-Carrier W-CDMA Broadband Performance @ P out = 20 Watts Avg. Figure 4. 2-Carrier W-CDMA Broadband Performance @ P out = 40 Watts Avg.
3.84 MHz Channel Bandwidth
Figure 5. Two-Tone Power Gain versus
10 MHz Tone Spacing
Figure 6. Third Order Intermodulation Distortion
Figure 7. Intermodulation Distortion Products Figure 8. Pulse CW Output Power versus Figure 9. 2-Carrier W-CDMA ACPR, IM3, Power Gain Pout, OUTPUT POWER (WATTS) AVG. Figure 10. Power Gain and Drain Efficiency Figure 11. Power Gain versus Output Power
20 V 24 V
Figure 12. MTTF Factor versus Junction Temperature MTTF factor by ID2 for MTTF in a particular application. Figure 13. CCDF W-CDMA 3GPP , Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
Figure 14. 2-Carrier W-CDMA Spectrum
3.84 MHz
3.84 MHz BW
Figure 15. Series Equivalent Source and Load Impedance
MRF6S23100HR3 MRF6S23100HSR3 RF Device Data Freescale Semiconductor NOTES
MRF6S23100HR3 MRF6S23100HSR3 NOTES
MRF6S23100HR3 MRF6S23100HSR3 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS CASE 465-06 ISSUE G NI-780 MRF6S23100HR3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 1.335 1.345 33.91 34.16 B 0.380 0.390 9.65 9.91 C 0.125 0.170 3.18 4.32 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 G 1.100 BSC 27.94 BSC H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 N 0.772 0.788 19.60 20.00 Q .118 .138 3.00 3.51 R 0.365 0.375 9.27 9.53 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE D G K C E H S F S 0.365 0.375 9.27 9.52 M 0.774 0.786 19.66 19.96 aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF Q2X MAMbbb B MT MAMbbb B MT B B (FLANGE) SEATING PLANE MAMccc B MT MAMbbb B MT AA (FLANGE) T N (LID) M (INSULATOR) MAMaaa B MT (INSULATOR) R MAMccc B MT (LID) CASE 465A-06 ISSUE H NI-780S MRF6S23100HSR3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.805 0.815 20.45 20.70 B 0.380 0.390 9.65 9.91 C 0.125 0.170 3.18 4.32 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.774 0.786 19.61 20.02 R 0.365 0.375 9.27 9.53 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE C E H F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF aaa 0.005 REF 0.127 REF S 0.365 0.375 9.27 9.52 N 0.772 0.788 19.61 20.02 SEATING PLANE MAMccc B MT MAMbbb B MT A A (FLANGE) T N (LID) M (INSULATOR) MAMccc B MT MAMaaa B MT R (LID) S (INSULATOR) D K U (FLANGE) Z (LID) MAMbbb B MT B B (FLANGE)
MRF6S23100HR3 MRF6S23100HSR3 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customers technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale/C0116 and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. Freescale Semiconductor, Inc. 2005. All rights reserved. How to Reach Us: Home Page: www.freescale.com E-mail: support@freescale.com USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370 1300 N. Alma School Road Chandler, Arizona 85224 +1-800-521-6274 or +1-480-768-2130 support@freescale.com Europe, Middle East, and Africa: Freescale Halbleiter Deutschland GmbH Technical Information Center Schatzbogen 7
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