MRF6S20010NR1_09 FREESCALE | Alldatasheet
Document overview
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Technical content
Features
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Internally Matched for Ease of Use
- Qualified Up to a Maximum of 32 V DD Operation
- Integrated ESD Protection
- 225°C Capable Plastic Package
- RoHS Compliant
- In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
Table 1. Maximum Ratings
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product. © Freescale Semiconductor, Inc., 2005-2006, 2008-2009. All rights reserved.
Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted)
- MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product. Select Documentation/Application Notes - AN1955.
- Part internally matched on input.
- Measurement made with device in straight lead configuration before any lead forming operation is applied.
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted) (continued) PAR = 8.5 dB @ 0.01% Probability on CCDF.
Figure 1. MRF6S20010NR1(GNR1) Test Circuit Schematic 2110-2170 MHz Table 6. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values 2110-2170 MHz
Figure 2. MRF6S20010NR1(GNR1) Test Circuit Component Layout 2110-2170 MHz
Figure 15. CCDF W-CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
Figure 16. 2-Carrier W-CDMA Spectrum
3.84 MHz
3.84 MHz BW
Figure 17. MRF6S20010NR1(GNR1) Test Circuit Schematic 1930-1990 MHz Table 7. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values 1930-1990 MHz
Figure 18. MRF6S20010NR1(GNR1) Test Circuit Component Layout 1930-1990 MHz
Figure 19. Single-Carrier N-CDMA Broadband Performance Figure 20. Single-Carrier N-CDMA ACPR and Drain Pout, OUTPUT POWER (WATTS) AVG.
8 Through 13)
Figure 21. Single-Carrier CCDF N-CDMA
1.2288 MHz
Figure 22. Single-Carrier N-CDMA Spectrum
Figure 23. MRF6S20010NR1(GNR1) Test Circuit Schematic 1805-1880 MHz Table 8. MRF6S20010NR1(GNR1) Test Circuit Component Designations and Values 1805-1880 MHz
Figure 24. MRF6S20010NR1(GNR1) Test Circuit Component Layout 1805-1880 MHz
Figure 29. Series Equivalent Source and Load Impedance
1800 MHz
2170 MHz
1900 MHz
Table 9. Common Source Scattering Parameters (VDD = 28 V, IDQ = 126 mA, TA = 25°C, 50 ohm system)
Table 9. Common Source Scattering Parameters (VDD = 28 V, IDQ = 126 mA, TA = 25°C, 50 ohm system) (continued)
MRF6S20010NR1 MRF6S20010GNR1 PACKAGE DIMENSIONS
MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes
- AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
- AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages Engineering Bulletins
- EB212: Using Data Sheet Impedances for RF LDMOS Devices Software
- Electromigration MTTF Calculator
- RF High Power Model For Software and Tools, do a Part Number search at http://www.freescale.com, and select the Part Number link. Go to the Software & Tools tab on the parts Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 2 Dec. 2008 • Changed Storage Temperature Range in Max Ratings table from -65 to +175 to -65 to +150 for standardization across products, p. 1
- Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150°C, p. 1
- Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related Continuous use at maximum temperature will affect MTTF footnote added and changed 200°C to 225°C in Capable Plastic Package bullet, p. 1
- Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2
- Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2
- Updated Part Numbers in Tables 6, 7, 8, Component Designations and Values, to RoHS compliant part numbers, p. 4, 10, 14
- Adjusted scale for Fig. 7, Intermodulation Distortion Products versus Tone Spacing, to better match the devices capabilities, p. 6
- Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 7
- Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and location of MTTF calculator for device, p. 7
- Removed ALT1 definition from Fig. 21, Single-Carrier CCDF N-CDMA, given no supporting performance information provided, p. 13
- Replaced Case Outline 1265-08 with 1265-09, Issue K, p. 1, 20-22. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed Standard Package Number.
- Replaced Case Outline 1265A-02 with 1265A-03, Issue C, p. 1, 23-25. Corrected cross hatch pattern and its dimensions (D2 and E2) on source contact (D2 changed from Min-Max .290-.320 to .290 Min; E3
- Added Product Documentation and Revision History, p. 26 3 June 2009 • Corrected decimal placement for Ciss (changed 0.12 pF to 120 pF) and Coss (changed 0.02 pF to 20 pF), Dynamic Characteristics table, p. 2
- Added footnote, Measurement made with device in straight lead configuration before any lead forming operation is applied, to Functional Tests table, p. 2.
- Added AN3789, Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages to Product Documentation, Application Notes, p. 26
- Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 26
MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals, must be validated for each customer application by customers technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale/C0116 and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2005-2006, 2008-2009. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516
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