MRF6S20010N NXP | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 28
Technical content
Features
Characterized with Series Equivalent Large- -Signal Impedance Parameters Internally Matched for Ease of Use Qualified Up to a Maximum of 32 V DD Operation Integrated ESD Protection 225C Capable Plastic Package In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13- -inch Reel. Table 1. Maximum Ratings
- Continuous use at maximum temperature will affect MTTF.
- MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product. Figure 1. Pin Connections source terminal for the transistor. Freescale Semiconductor, Inc., 2005- -2006, 2008- -2009, 2014. All rights reserved.
Table 2. Thermal Characteristics Table 3. ESD Protection Characteristics Table 4. Moisture Sensitivity Level Table 5. Electrical Characteristics(TA =2 5C unless otherwise noted)
- MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product. Select Documentation/Application Notes - - AN1955.
- Part internally matched on input.
- Measurements made with device in straight leadconfiguration before any lead forming operation is applied. Lead forming is used for gull
Table 5. Electrical Characteristics(TA =2 5C unless otherwise noted)(continued) PAR = 8.5 dB @ 0.01% Probability on CCDF.
Figure 2. MRF6S20010NR1 Test Circuit Schematic — 2110- -2170 MHz Table 6. MRF6S20010NR1 Test Circuit ComponentDesignations and Values — 2110- -2170 MHz
Figure 3. MRF6S20010NR1 Test Circuit Component Layout — 2110- -2170 MHz
Figure 15. CCDF W- -CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single- -Carrier Test Signal
Figure 16. 2-Carrier W-CDMA Spectrum
3.84 MHz
3.84 MHz BW
Figure 17. MRF6S20010NR1 Test Circuit Schematic — 1930- -1990 MHz Table 7. MRF6S20010NR1 Test Circuit Component Designations and Values — 1930- -1990 MHz
Figure 18. MRF6S20010NR1 Test Circuit Component Layout — 1930- -1990 MHz
Figure 19. Single- -Carrier N- -CDMA Broadband Performance Figure 20. Single- -Carrier N- -CDMA ACPR and Drain Pout, OUTPUT POWER (WATTS) AVG.
8 Through 13)
Figure 21. Single- -Carrier CCDF N- -CDMA
1.2288 MHz
Figure 22. Single- -Carrier N- -CDMA Spectrum
Figure 23. MRF6S20010NR1 Test Circuit Schematic — 1805- -1880 MHz Table 8. MRF6S20010NR1 Test Circuit Component Designations and Values —1805- -1880 MHz
Figure 24. MRF6S20010NR1 Test Circuit Component Layout — 1805- -1880 MHz
Figure 29. Series Equivalent Source and Load Impedance
1800 MHz
2170 MHz
1900 MHz
Table 9. Common Source Scattering Parameters(VDD =2 8V ,IDQ = 126 mA, TA =2 5C, 50 ohm system)
Table 9. Common Source Scattering Parameters(VDD =2 8V ,IDQ = 126 mA, TA =2 5C, 50 ohm system)(continued)
MRF6S20010NR1 MRF6S20010GNR1 PACKAGE DIMENSIONS
MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1
MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor
MRF6S20010NR1 MRF6S20010GNR1 PRODUCT DOCUMENTATION, TOOLS AND SOFTWARE Refer to the following documents to aid your design process. Application Notes AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages AN1955: Thermal Measurement Methodology of RF Power Amplifiers AN3789: Clamping of High Power RF Transistors and RFICs in Over- -Molded Plastic Packages Engineering Bulletins EB212: Using Data Sheet Impedances for RF LDMOS Devices Software Electromigration MTTF Calculator RF High Power Model For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document. Revision Date Description 2 Dec. 2008 Changed Storage Temperature Range in Max Ratings table from - -65 to +175 to - -65 to +150 for standardization across products, p. 1 Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150C, p. 1 Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table, related “Continuous use at maximum temperature will affect MTTF” footnote added and changed 200C to 225C in Capable Plastic Package bullet, p. 1 Corrected VDS to VDD in the RF test condition voltage callout for VGS(Q), On Characteristics table, p. 2 Corrected Ciss test condition to indicate AC stimulus on the VGS connection versus the VDS connection, Dynamic Characteristics table, p. 2 Updated Part Numbers in Tables 6, 7, 8, Component Designations and Values, to RoHS compliant part numbers, p. 4, 10, 14 Adjusted scale for Fig. 7, Intermodulation Distortion Products versus Tone Spacing, to better match the device’s capabilities, p. 6 Removed lower voltage tests from Fig. 10, Power Gain versus Output Power, due to fixed tuned fixture limitations, p. 7 Replaced Fig. 12, MTTF versus Junction Temperature with updated graph. Removed Amps2 and listed operating characteristics and locationof MTTF calculator for device, p. 7 Removed ALT1 definition from Fig. 21, Single- -Carrier CCDF N- -CDMA, given no supporting performance information provided, p. 13 Replaced Case Outline 1265- -08 with 1265- -09, Issue K, p. 1, 20- -22. Corrected cross hatch pattern in bottom view and changed its dimensions (D2 and E3) to minimum value on source contact (D2 changed Standard Package Number. Replaced Case Outline 1265A- -02 with 1265A- -03, Issue C, p. 1, 23- -25. Corrected cross hatch pattern and its dimensions (D2 and E2) on source contact (D2 changed from Min- -Max .290- -.320 to .290 Min; E3 Number. Added Product Documentation and Revision History, p. 26 3 June 2009 Corrected decimal placement for Ciss (changed 0.12 pF to 120 pF) and Coss (changed 0.02 pF to 20 pF), Dynamic Characteristics table, p. 2 Added footnote, Measurement made with device in straight lead configuration before any lead forming operation is applied, to Functional Tests table, p. 2. Added AN3789, Clamping of High Power RF Transistorsand RFICs in Over- -Molded Plastic Packages to Product Documentation, Application Notes, p. 26 Added Electromigration MTTF Calculator and RF HighPower Model availability to Product Software, p. 26 (continued)
MRF6S20010NR1 MRF6S20010GNR1 RF Device Data Freescale Semiconductor REVISION HISTORY (cont.) Revision Date Description 4 Jan. 2014 Table 2. Thermal Characteristics: CWthermal value changed from 2.5 to 2.3C/W to reflect recent thermal test results; two- -tone test W PEP thermal value changed from 5.9 to 2.9C/W to reflect recent thermal test results. Thermal value changes are based on an improvement in the RF feedback resistor design, p. 2 Table 3, ESD Protection Characteristics, removed the word “Minimum” after the ESD class rating. ESD ratings are characterized during new product development but are not 100% tested during production. ESD ratings provided in the data sheet are intended to be used as a guideline when handling ESD sensitive devices, p. 2 Fig. 12, MTTF versus Junction Temperature removed, p. 7. Refer to the device’s MTTF Calculator available at freescale.com/RFpower. Go to Design Resources > Software and Tools.
MRF6S20010NR1 MRF6S20010GNR1 Information in this document is provided solely to enablesystem and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particularpurpose, nor does Freescale assume any liability arisingout of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., respective owners. E 2005- -2006, 2008- -2009, 2014 Freescale Semiconductor, Inc. How to Reach Us: Home Page: freescale.com Web Support: freescale.com/support Document Number: MRF6S20010N Rev. 4, 1/2014