MRF6S19200HR3 FREESCALE | Alldatasheet

Document overview

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Technical content

Features

  • 100% PAR Tested for Guaranteed Output Power Capability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Internally Matched for Ease of Use
  • Integrated ESD Protection
  • Greater Negative Gate-Source Voltage Range for Improved Class C Operation
  • Optimized for Doherty Applications
  • RoHS Compliant
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Table 1. Maximum Ratings Table 2. Thermal Characteristics

  1. Continuous use at maximum temperature will affect MTTF.
  2. MTTF calculator available at http://www.freescale.com/rf . Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved.

Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.

  1. Part internally matched both on input and output. (continued)

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued)

Figure 1. MRF6S19200HR3(HSR3) Test Circuit Schematic Table 5. MRF6S19200HR3(HSR3) Test Circuit Component Designations and Values

Figure 2. MRF6S19200HR3(HSR3) Test Circuit Component Layout

Figure 3. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ Pout = 56 Watts Avg. Figure 4. Output Peak-to-Average Ratio Compression (PARC) Broadband Performance @ Pout = 87 Watts Avg. Figure 5. Two-Tone Power Gain versus Figure 6. Third Order Intermodulation Distortion

3.84 MHz Channel Bandwidth

Figure 12. MTTF versus Junction Temperature is operated at VDD = 28 Vdc, Pout = 56 W Avg., and ηD = 29.5%. Figure 13. CCDF W-CDMA 3GPP , Test Model 1,

64 DPCH, 50% Clipping, Single-Carrier Test Signal

Channel Bandwidth @ ±5 MHz Offset.

3.84 MHz

Figure 14. Single-Carrier W-CDMA Spectrum

Figure 15. Series Equivalent Source and Load Impedance

MRF6S19200HR3 MRF6S19200HSR3 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 1.335 1.345 33.91 34.16 B 0.380 0.390 9.65 9.91 C 0.125 0.170 3.18 4.32 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 G 1.100 BSC 27.94 BSC H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 N 0.772 0.788 19.60 20.00 Q .118 .138 3.00 3.51 R 0.365 0.375 9.27 9.53 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE D G K C E H S F S 0.365 0.375 9.27 9.52 M 0.774 0.786 19.66 19.96 aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF Q2X MAMbbb B MT MAMbbb B MT B B (FLANGE) SEATING PLANE MAMccc B MT MAMbbb B MT AA (FLANGE) T N (LID) M (INSULATOR) MAMaaa B MT (INSULATOR) R MAMccc B MT (LID) CASE 465-06 ISSUE G NI-780 MRF6S19200HR3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.805 0.815 20.45 20.70 B 0.380 0.390 9.65 9.91 C 0.125 0.170 3.18 4.32 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.774 0.786 19.61 20.02 R 0.365 0.375 9.27 9.53 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE D K C E H F U (FLANGE) Z (LID) bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF aaa 0.005 REF 0.127 REF S 0.365 0.375 9.27 9.52 N 0.772 0.788 19.61 20.02 MAMbbb B MT B B (FLANGE) SEATING PLANE MAMccc B MT MAMbbb B MT A A (FLANGE) T N (LID) M (INSULATOR) MAMccc B MT MAMaaa B MT R (LID) S (INSULATOR) CASE 465A-06 ISSUE H NI-780S MRF6S19200HSR3

MRF6S19200HR3 MRF6S19200HSR3 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes

  • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins
  • EB212: Using Data Sheet Impedances for RF LDMOS Devices

REVISION HISTORY

The following table summarizes revisions to this document. Revision Date Description 0 Mar. 2008 • Initial Release of Data Sheet

MRF6S19200HR3 MRF6S19200HSR3 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Freescale Semiconductor reserves the right to make changes without further notice to any products herein. Freescale Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Freescale Semiconductor does not convey any license under its patent rights nor the rights of others. Freescale Semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Freescale Semiconductor product could create a situation where personal injury or death may occur. Should Buyer purchase or use Freescale Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold Freescale Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescale/C0116 and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008. All rights reserved. How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516

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