MRF6P18190HR6 FREESCALE | Alldatasheet
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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 1805 to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.
- Typical 2-carrier W-CDMA Performance: V DD = 28 Volts, IDQ = 2000 mA, Pout = 44 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF. Power Gain 15.9 dB Drain Efficiency 27.5% IM3 @ 10 MHz Offset -37 dBc @ 3.84 MHz Channel Bandwidth ACPR @ 5 MHz Offset -41 dBc @ 3.84 MHz Channel Bandwidth
- Capable of Handling 10:1 VSWR, @ 28 Vdc, 1880 MHz, 190 Watts CW Output Power
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Internally Matched, Controlled Q, for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- Lower Thermal Resistance Package
- Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
- Low Gold Plating Thickness on Leads, 40µ″ Nominal.
- In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings Table 2. Thermal Characteristics
- MTTF calculator available at http://www.freescale.com/rf . Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product. Select Documentation/Application Notes - AN1955. packaging MOS devices should be observed. Freescale Semiconductor, Inc., 2005. All rights reserved.
Table 3. ESD Protection Characteristics Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)
- Each side of device measured separately.
- Part is internally matched both on input and output.
- Measurements made with device in push-pull configuration.
Figure 1. MRF6P18190H Test Circuit Schematic Table 5. MRF6P18190H Test Circuit Component Designations and Values
Figure 2. MRF6P18190H Test Circuit Component Layout
Figure 7. Intermodulation Distortion Products Figure 8. Pulse CW Output Power versus Figure 9. 2-Carrier W-CDMA ACPR, IM3, Figure 10. Power Gain and Drain Efficiency Figure 11. Power Gain versus Output Power
20 V16 V
Figure 12. MTTF Factor versus Junction Temperature MTTF factor by ID2 for MTTF in a particular application. Figure 13. CCDF W-CDMA 3GPP , Test Model 1,
64 DPCH, 67% Clipping, Single-Carrier Test Signal
Figure 14. 2-Carrier W-CDMA Spectrum
3.84 MHz
3.84 MHz BW
Figure 15. Series Equivalent Source and Load Impedance
NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.52 (38.61) BASED ON M3 SCREW. STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE DIM MIN MAX MIN MAX MILLIMETERSINCHES A 1.615 1.625 41.02 41.28 B 0.395 0.405 10.03 10.29 C 0.150 0.200 3.81 5.08 D 0.455 0.465 11.56 11.81 E 0.062 0.066 1.57 1.68 F 0.004 0.007 0.10 0.18 G 1.400 BSC 35.56 BSC H 0.082 0.090 2.08 2.29 K 0.117 0.137 2.97 3.48 L 0.540 BSC 13.72 BSC N 1.218 1.242 30.94 31.55 Q 0.120 0.130 3.05 3.30 R 0.355 0.365 9.01 9.27 A G L DK4X Q2X M 1.219 1.241 30.96 31.52 S 0.365 0.375 9.27 9.53 aaa 0.013 REF 0.33 REF bbb 0.010 REF 0.25 REF ccc 0.020 REF 0.51 REF SEATING PLANE N C E M MAMaaa B MT B B (FLANGE) H F MAMccc B MT R (LID) S (INSULATOR) MAMbbb B MT A T MAMbbb B MT (INSULATOR) MAMccc B MT (LID) PIN 5 MAMbbb B MT
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