MRF6522-70R3 FREESCALE | Alldatasheet
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MRF6522-70R3MOTOROLA RF DEVICE DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large-signal, common source amplifier applications in 26 volt base station equipment.
- Specified Performance @ Full GSM Band, 921-960 MHz, 26 Volts Output Power, P1dB 80 Watts (Typ) Power Gain @ P1dB 16 dB (Typ) Efficiency @ P1dB 58% (Typ)
- Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel. MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS ± 20 Vdc Drain Current Continuous ID 7 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 159 0.9 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, Junction to Case RθJC 1.1 °C/W NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF6522-70/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6522−70R3 921 - 960 MHz, 70 W, 26 V LATERAL N-CHANNEL RF POWER MOSFET CASE 465D-05, STYLE 1 NI-600 Motorola, Inc. 2004 REV 6 Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 20 µAdc) V(BR)DSS 65 Vdc Zero Gate Voltage Drain Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS 10 µAdc Gate-Source Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) IGSS 1 µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) VGS(th) 2 3 4 Vdc Gate Quiescent Voltage (VDS = 26 Vdc, ID = 400 mAdc) VGS(Q) 3 4 5 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 Adc) VDS(on) 0.15 0.6 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) gfs 2 3 S DYNAMIC CHARACTERISTICS Input Capacitance (1) (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Ciss 130 pF Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Coss 41 47 52 pF Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Crss 2.4 3 3.4 pF FUNCTIONAL TESTS (In Motorola Test Fixture) Output Power (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) P1dB 73 80 W Common-Source Amplifier Power Gain @ P1dB (Min) (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) Gps 14 16 18 dB Drain Efficiency @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) η1 47 51 % Drain Efficiency @ P1dB (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz) η2 58 % Input Return Loss @ Pout = 50 W (VDD = 26 Vdc, IDQ = 400 mA, f = 921 MHz and 960 MHz f = 940 MHz) IRL -1 0 -1 5 dB Output Mismatch Stress (2) (VDD = 26 Vdc, IDQ = 400 mA, f = Full GSM Band 921 - 960 MHz, VSWR = 5:1, All Phase Angles) Ψ No Degradation In Output Power Before and After Test (1) Value excludes the input matching. (2) To meet application requirements, Motorola test fixtures have been designed to cover full GSM 900 band ensuring batch-to-ba tch consistency. Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
Figure 11. Performance in Broadband Circuit (at Small Signal) Freescale Semiconductor, Inc.
Figure 12. Series Equivalent Source and Load Impedance
960 MHz
Freescale Semiconductor, Inc.
D G K A C H E SEATING PLANE F NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 1.065 1.075 27.05 27.30 B 0.380 0.390 9.65 9.91 C 0.160 0.205 4.06 5.21 D 0.425 0.435 10.80 11.05 E 0.060 0.070 1.52 1.78 F 0.004 0.006 0.10 0.15 G 0.870 BSC 22.10 BSC H 0.096 0.106 2.44 2.69 K 0.190 0.223 4.83 5.66 M 0.594 0.606 15.09 15.39 Q 0.124 0.130 3.15 3.30 R 0.394 0.404 10.01 10.26 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE Q2X MAMbbb B MT MAMbbb B MT B B (FLANGE) MAMccc B MT MAMbbb B MT A T N (LID) M (INSULATOR) S MAMaaa B MT (INSULATOR) R MAMccc B MT (LID) S 0.395 0.405 10.03 10.29 N 0.591 0.601 15.01 15.27 aaa 0.005 REF 0.13 REF bbb 0.010 REF 0.25 REF ccc 0.015 REF 0.38 REF Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All oper ating parameters, including Typicals, must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. /C0069 Motorola Inc. 2004 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, Motorola Literature Distribution 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan P.O. Box 5405, Denver, Colorado 80217 81-3- 3440-3569 1-800-521-6274 or 480-768-2130 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF6522-70/D◊ Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...