MRF607 MICROSEMI | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 4

Technical content

Features

  • 12.5V Silicon NPN, To-39 packaged VHF & UHF Transistor
  • 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz
  • 11.5 minimum Gain @ 12.5V, 175 MHz
  • 50% Efficiency @ 12.5V, 175 MHz RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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MSC1322.PDF 10-25-99 MRF607 ELECTRICAL SPECIFICATIONS ( Tcase = 25 °C) STATIC (off) Symbol Test Conditions Value Min. Typ. Max. Unit BVCES Collector-Emitter Breakdown Voltage (IC = 25 mAdc, VBE = 0 Vdc) 36 - - Vdc BVCEO Collector-Emitter Sustaining Voltage (IC=25 mAdc, IB=0) 16 - - Vdc BVEBO Emitter-Base Breakdown Voltage (IE = .5 mA, IC = 0) 4.0 - - Vdc ICEO Collector Cutoff Current (VCE = 10 Vdc, IB = 0) - - .3 mA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 5.0 Vdc) 20 - 150 - DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit COB Output Capacitance (VCB = 12 Vdc, IE = 0, f = 1.0 MHz) - - 15 pF FUNCTIONAL Symbol Test Conditions Value Min. Typ. Max. Unit G PE Power Gain Test Circuit-Figure 1 Pout = 1.75W, VCE = 12.5Vdc f = 175 MHz 11.5 - - dB ηC Collector Efficiency Test Circuit-Figure 1 Pout = 1.75W, VCE = 12.5Vdc f = 175 MHz 50 - - %

MSC1322.PDF 10-25-99 MRF607 P OUT (R L =50 OHMS) V cc = 12.5 V P IN (R S =50 OHMS) C2 C3 C5 C6 Figure 1 - 175 MHz RF AMPLIFIER CIRCUIT FOR G PE , AND EFFICIENCY SPECIFICATIONS . C1 2.7-15 pF , ARCO 461 L1 1 TURN #20 AWG, 3/8” I.D. C2 9.0-180 pF , ARCO 463 L2 3 TURNS #20 AWG, 3/8” I.D. C3, C4 5.0-80 pF ARCO 462 L3 0.22 µH MOLDED CHOKE C5 1000 pF UNELCO L4 0.15 µH MOLDED CHOKE WITH C6 5 µF, 25 Vdc, TANTALUM FERROXCUBE 56-590-65-3B BEAD ON GROUND LEAD

MSC1322.PDF 10-25-99 MRF607