MRF5S21150 MOTOROLA | Alldatasheet

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MRF5S21150R3 MRF5S21150SR3MOTOROLA RF DEVICE DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica- tions. To be used in Class AB fo r PCN - PCS/cellular radio and WLL applications.

  • Typical 2-carrier W-CDMA Performance for V DD = 28 Volts, IDQ = 1300 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 -5 MHz and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW @ f1 -10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF. Output Power — 33 Watts Avg. Power Gain — 12.5 dB Efficiency — 25% IM3 — -37 dBc ACPR — -39 dBc
  • Internally Matched, Controlled Q, for Ease of Use
  • High Gain, High Efficiency and High Linearity
  • Integrated ESD Protection
  • Designed for Maximum Gain and Insertion Phase Flatness
  • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW Output Power
  • Excellent Thermal Stability
  • Characterized with Series Equivalent Large-Signal Impedance Parameters
  • Qualified Up to a Maximum of 32 VDD Operation
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 367 2.1 Watts W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C CW Operation CW 125 Watts THERMAL CHARACTERISTICS Characteristic Symbol Value (1)(2) Unit Thermal Resistance, Junction to Case Case Temperature 80°C, 125 W CW Case Temperature 80°C, 33 W CW RθJC 0.47 0.53 °C/W (1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. (2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF5S21150/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF5S21150R3 MRF5S21150SR3 2170 MHz, 33 W AVG., 2 x W-CDMA, 28 V LATERAL N-CHANNEL RF POWER MOSFETs CASE 465C-02, STYLE 1 NI-880S MRF5S21150SR3 CASE 465B-03, STYLE 1 NI-880 MRF5S21150R3  Motorola, Inc. 2004 REV 2 Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

MRF5S21150R3 MRF5S21150SR3 MOTOROLA RF DEVICE DATA ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 1 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 µAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 µAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 360 µAdc) VGS(th) 2.5 — 3.5 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1300 mAdc) VGS(Q) — 3.7 — Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 3.6 Adc) VDS(on) — 0.26 0.3 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 3.6 Adc) gfs — 9 — S DYNAMIC CHARACTERISTICS (1) Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 3.2 — pF FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2-carrier W-CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and Common-Source Amplifier Power Gain (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) Gps 11 12.5 — dB Drain Efficiency (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) η 23 25 — % Third Order Intermodulation Distortion (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3 measured over 3.84 MHz BW at f1 -10 MHz and f2 +10 MHz referenced to carrier channel power.) IM3 -37 -35 dBc Adjacent Channel Power Ratio (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR measured over 3.84 MHz at f1 -5 MHz and f2 +5 MHz.) ACPR — -39 -37 dBc Input Return Loss (VDD = 28 Vdc, Pout = 33 W Avg., IDQ = 1300 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz) IRL — -12 -9 dB (1) Part is internally matched both on input and output. Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

Figure 1. MRF5S21150 Test Circuit Schematic Table 1. MRF5S21150 Test Circuit Component Designations and Values Freescale Semiconductor, Inc.

Figure 2. MRF5S21150 Test Circuit Component Layout Freescale Semiconductor, Inc.

Figure 8. 2-Carrier W-CDMA ACPR, IM3, Figure 9. 2-Carrier W-CDMA Spectrum Figure 10. CCDF W-CDMA 3GPP , Test Model 1,

64 DPCH, 67% Clipping, Single Carrier Test Signal

Figure 11. MTBF Factor versus Junction TemperatureMTBF FACTOR (HOURS x AMPS )2 MTBF factor by ID2 for MTBF in a particular application.

3.84 MHz

3.84 MHz BW

Freescale Semiconductor, Inc.

Figure 12. Series Equivalent Input and Output Impedance Freescale Semiconductor, Inc.

MRF5S21150R3 MRF5S21150SR3 MOTOROLA RF DEVICE DATA NOTES Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

MRF5S21150R3 MRF5S21150SR3MOTOROLA RF DEVICE DATA NOTES Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

MRF5S21150R3 MRF5S21150SR3 MOTOROLA RF DEVICE DATA NOTES Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

MRF5S21150R3 MRF5S21150SR3MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS CASE 465B-03 ISSUE B NI-880 MRF5S21150R3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. DELETED DIM MIN MAX MIN MAX MILLIMETERSINCHES A 1.335 1.345 33.91 34.16 B 0.535 0.545 13.6 13.8 C 0.147 0.200 3.73 5.08 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 G 1.100 BSC 27.94 BSC H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 N 0.871 0.889 19.30 22.60 Q .118 .138 3.00 3.51 R 0.515 0.525 13.10 13.30 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE D G K C E H F Q2X MAMbbb B MT MAMbbb B MT B B (FLANGE) SEATING PLANE MAMccc B MT MAMbbb B MT AA (FLANGE) T N (LID) M (INSULATOR) S MAMaaa B MT (INSULATOR) R MAMccc B MT (LID) S 0.515 0.525 13.10 13.30 M 0.872 0.888 22.15 22.55 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF CASE 465C-02 ISSUE A NI-880S MRF5S21150SR3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.905 0.915 22.99 23.24 B 0.535 0.545 13.60 13.80 C 0.147 0.200 3.73 5.08 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE SEATING PLANE D K C E H F MAMbbb B MT B B (FLANGE) MAMccc B MT MAMbbb B MT AA (FLANGE) T N (LID) M (INSULATOR) MAMccc B MT MAMaaa B MT R (LID) S (INSULATOR) S 0.515 0.525 13.10 13.30 M 0.872 0.888 22.15 22.55 bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF aaa 0.007 REF 0.178 REF Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...

MRF5S21150R3 MRF5S21150SR3 MOTOROLA RF DEVICE DATA Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All oper ating parameters, including “Typicals”, must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. /C0069 Motorola Inc. 2004 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, Motorola Literature Distribution 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan P.O. Box 5405, Denver, Colorado 80217 81-3- 3440-3569 1-800-521-6274 or 480-768-2130 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF5S21150/D◊ Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...