MRF5S19100HR3 MOTOROLA | Alldatasheet
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MRF5S19100HR3 MRF5S19100HSR3MOTOROLA RF DEVICE DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies up to 1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
- Typical 2-Carrier N-CDMA Performance: V DD = 28 Volts, IDQ = 1000 mA, Pout = 22 Watts Avg., Full Frequency Band. IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = Power Gain 13.9 dB Drain Efficiency 25.5% IM3 @ 2.5 MHz Offset -36.5 dBc @ 1.2288 MHz Channel Bandwidth ACPR @ 885 kHz Offset -50.7 dBc @ 30 kHz Channel Bandwidth
- Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW Output Power
- Characterized with Series Equivalent Large-Signal Impedance Parameters
- Internally Matched, Controlled Q, for Ease of Use
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- Lower Thermal Resistance Package
- Low Gold Plating Thickness on Leads, 40µ″ Nominal.
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage VDSS 65 Vdc Gate-Source Voltage VGS -0.5, +15 Vdc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 269 1.54 W W/°C Storage Temperature Range Tstg - 65 to +150 °C Operating Junction Temperature TJ 200 °C THERMAL CHARACTERISTICS Characteristic Symbol Value (1) Unit Thermal Resistance, Junction to Case Case Temperature 75°C, 100 W CW Case Temperature 70°C, 22 W CW RθJC 0.64 0.65 °C/W (1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf. Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. Order this document by MRF5S19100H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF5S19100HR3 MRF5S19100HSR3
1990 MHz, 22 W AVG, 28 V
CASE 465-06, STYLE 1 NI-780 MRF5S19100HR3 CASE 465A-06, STYLE 1 NI-780S MRF5S19100HSR3 Motorola, Inc. 2004 REV 2 Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
MRF5S19100HR3 MRF5S19100HSR3 MOTOROLA RF DEVICE DATA ESD PROTECTION CHARACTERISTICS Test Conditions Class Human Body Model 2 (Minimum) Machine Model M3 (Minimum) Charge Device Model C7 (Minimum) ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS 10 µAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS 1 µAdc Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS 1 µAdc ON CHARACTERISTICS (DC) Gate Threshold Voltage (VDS = 10 Vdc, ID = 240 µAdc) VGS(th) 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1000 mAdc) VGS(Q) 3.7 Vdc Drain-Source On-Voltage (VGS = 10 Vdc, ID = 2.4 Adc) VDS(on) 0.26 Vdc Forward Transconductance (VDS = 10 Vdc, ID = 2.4 Adc) gfs 6.3 S DYNAMIC CHARACTERISTICS Reverse Transfer Capacitance (1) (VDS = 28 Vdc, VGS = 0, f = 1.0 MHz) Crss 2.2 pF FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1000 mA, Pout = 22 W Avg., f1 = 1930 MHz, f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz, 2-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carriers. ACPR measured in Probability on CCDF. Power Gain Gps 12.5 13.9 dB Drain Efficiency ηD 24 25.5 % Intermodulation Distortion IM3 -36.5 -35 dBc Adjacent Channel Power Ratio ACPR -50.7 -48 dBc Input Return Loss IRL -13 -9 dB (1) Part is internally matched both on input and output. Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
Figure 1. MRF5S19100HR3(HSR3) Test Circuit Schematic Table 1. MRF5S19100HR3(HSR3) Test Circuit Component Designations and Values
- Need for part will vary from fixture to fixture.
Freescale Semiconductor, Inc.
Figure 2. MRF5S19100HR3(HSR3) Test Circuit Component Layout Freescale Semiconductor, Inc.
Figure 3. 2-Carrier N-CDMA Broadband PerformanceG ps, POWER GAIN (dB) Figure 4. Two-Tone Power Gain versus Figure 5. Third Order Intermodulation Distortion Figure 6. Intermodulation Distortion Products Figure 7. Pulse CW Output Power versus
1.2288 MHz Channel Bandwidth
Freescale Semiconductor, Inc.
Pout, OUTPUT POWER (WATTS) AVG. Figure 8. 2-Carrier N-CDMA ACPR, IM3, Power Gain Figure 9. 2-Carrier N-CDMA Spectrum Figure 10. MTTF Factor versus Junction Temperature MTTF factor by ID2 for MTTF in a particular application.
1.2288 MHz
Freescale Semiconductor, Inc.
Figure 11. Series Equivalent Input and Output Impedance Freescale Semiconductor, Inc.
MRF5S19100HR3 MRF5S19100HSR3 MOTOROLA RF DEVICE DATA NOTES Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
MRF5S19100HR3 MRF5S19100HSR3MOTOROLA RF DEVICE DATA NOTES Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
MRF5S19100HR3 MRF5S19100HSR3 MOTOROLA RF DEVICE DATA NOTES Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
MRF5S19100HR3 MRF5S19100HSR3MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS CASE 465-06 ISSUE F NI-780 MRF5S19100HR3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 1.335 1.345 33.91 34.16 B 0.380 0.390 9.65 9.91 C 0.125 0.170 3.18 4.32 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 G 1.100 BSC 27.94 BSC H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 N 0.772 0.788 19.60 20.00 Q .118 .138 3.00 3.51 R 0.365 0.375 9.27 9.53 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE D G K C E H S F S 0.365 0.375 9.27 9.52 M 0.774 0.786 19.66 19.96 aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF Q2X MAMbbb B MT MAMbbb B MT B B (FLANGE) SEATING PLANE MAMccc B MT MAMbbb B MT AA (FLANGE) T N (LID) M (INSULATOR) MAMaaa B MT (INSULATOR) R MAMccc B MT (LID) CASE 465A-06 ISSUE F NI-780S MRF5S19100HSR3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. DIM MIN MAX MIN MAX MILLIMETERSINCHES A 0.805 0.815 20.45 20.70 B 0.380 0.390 9.65 9.91 C 0.125 0.170 3.18 4.32 D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.774 0.786 19.61 20.02 R 0.365 0.375 9.27 9.53 STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE D K C E H F U (FLANGE) Z (LID) bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF aaa 0.005 REF 0.127 REF S 0.365 0.375 9.27 9.52 N 0.772 0.788 19.61 20.02 MAMbbb B MT B B (FLANGE) SEATING PLANE MAMccc B MT MAMbbb B MT A A (FLANGE) T N (LID) M (INSULATOR) MAMccc B MT MAMaaa B MT R (LID) S (INSULATOR) Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...
MRF5S19100HR3 MRF5S19100HSR3 MOTOROLA RF DEVICE DATA Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All oper ating parameters, including Typicals, must be validated for each customer application by customers technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. /C0069 Motorola Inc. 2004 HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, Motorola Literature Distribution 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan P.O. Box 5405, Denver, Colorado 80217 81-3- 3440-3569 1-800-521-6274 or 480-768-2130 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors MRF5S19100H/D◊ Freescale Sem iconductor, I Freescale Semiconductor, Inc. For More Information On This Product, Go to: www.freescale.com nc...