MRF586 ADPOW | Alldatasheet
Document overview
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Technical content
Features
- Silicon NPN, TO-39 packaged VHF/UHF Transistor
- F t = 3.0 Ghz (typ) @ 300MHz, 14v, 90mA, GU max = 12.5dB (typ) @ 300 MHz, 15v, 40mA |S 21 |2 = 12.5dB (typ) @ 300 MHz, 15v, 40mA RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
140 COMMERCE DRIVE
MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF586 STATIC Value Symbol Test Conditions Min. Typ. Max. Unit BV CEO I C = 5.0 mA V BV EBO I E = 0.1 mA 3.0 V BV CBO I C =1.0 mA - V ICBO V CB = 10 V µµ µµ A HFE V CE = 5.0 V I C = 50 mA 200 DYNAMIC Value Symbol Test Conditions Min. Typ. Max. Unit fT f = 300 MHz IC = 90 mA VCE = 14 V 3.0 GHz COB f = 1.0MHz VCB = 10V 3.0 pf FUNCTIONAL Value Symbol Test Conditions Min. Typ. Max. Unit GU max Maximum Unilateral Gain (1) IC = 40 mA, VCE = 15V, f =
300 MHz
12.5 dB MAG Maximum Available Gain IC = 40 mA, VCE = 15V, f = 13.5 dB |S 21 |2 Insertion Gain IC = 40 mA, VCE = 15V, f = 11.5 dB
Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. Table 1. Common Emitter S-Parameters, @ VCE = 15 V, IC = 40 mA
Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein Visit our website at WWW.ADVANCEDPOWER.COM or contact our factory direct. MRF586