MRF545 MICROSEMI | Alldatasheet

Document overview

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  • PDF pages: 4

Technical content

Features

  • Silicon PNP, high Frequency, high breakdown, To-39 packaged, Transistor
  • Maximum Unilateral Gain = 14 dB ( typ) @ f = 200 MHz
  • High Collector Base Breakdown Voltage - BVCBO = 100 V (min)
  • High F T - 1400 MHz RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

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MSC1315.PDF 10-25-99 MRF545 ELECTRICAL SPECIFICATIONS ( Tcase = 25 °C) STATIC (off) Symbol Test Conditions Value Min. Typ. Max. Unit BVCEO Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) 70 - - Vdc BVCBO Collector-Base Breakdown Voltage (IC= 100 µAdc, IE=0) 100 - - Vdc BVEBO Emitter-Base Breakdown Voltage (IE = 100 µAdc, IC = 0) 3.0 - - Vdc ICBO Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) - - 20 µA ICES Collector Cutoff Current (VCE = 80 Vdc, IE = 0 Vdc) - 1.0 100 µA (on) HFE DC Current Gain (IC = 50 mAdc, VCE = 6.0 Vdc) 15 - - DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit COB Output Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) - 2.5 - pF CIB Input Capacitance (VEB = 3Vdc, IE=0, f=1 MHz) - 5.4 - pF CCB Junction Capacitance (VCB = 10Vdc, IE=0, f=1 MHz) - 2.8 3.2 pF fT Current-Gain - Bandwidth Product (IC = 50 mAdc, VCE = 25 Vdc, f = 250 MHz) 1000 1400 - MHz

Table 1. Common Emitter S-Parameters, @ VCE = 25 V, IC = 50 mA

MSC1315.PDF 10-25-99 MRF545